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This paper introduces a control method for Reverse-Conducting (RC-)IGBTs which reduces the control dead time of RC-IGBT inverters. Switching measurements with 6.5 kV RC-IGBTs concerning the applicability of the introduced control method and the effect of a load current direction change during the desaturation pulse are presented.
This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate...
Increasing the channel width of an IGBT is an obvious way to lower the Vce, sat value without any influences on the switching losses of the device. Consequently, the achievable benefit of IGBTs is limited due to the corresponding increase of the desaturation current, which threaten the short circuit robustness. This paper presents the benefits of an IGBT which could be realized, if the feature of...
Medium voltage 10 kV Silicon Carbide MOSFETs, introduce challenges regarding converter design. Very high rate of voltage change and capacitive couplings to for example cooling systems cause increased electromagnetic interference. The aim of this paper is to accurately model the capacitive coupling to a heat sink and experimentally validate the model. An analytic model of the heat sink is developed...
Multilevel inverters are an alternative for a wide range of low voltage electrical drives. They reduce power semiconductor losses, voltage transients at the motor windings, harmonic losses in the cables and common mode disturbance currents. In the low voltage range (<1000 V) new wide-bandgap semiconductors (SiC, GaN) have the potential to reduce the conduction and switching losses in multilevel...
For every power semiconductor chip designer, there is a trade-off between reaching a low Vce, sat value and a low desaturation current in order to produce more ruggedness against short circuit failures. If the width of the gate channel of an IGBT is increased, there is a hidden potential that can be used to increase the conduction performance significantly at the expense of an simultaneous higher...
Reverse-conducting IGBTs (RC-IGBTs) allow the modulation of plasma concentration in diode mode. This can be utilized to put the device in a low saturation mode during conduction in diode direction and to reduce the charge before reverse-recovery. [1] This paper gives an insight into the plasma modulation during the desaturation time and the lock time of RC-IGBTs in diode mode. The influence of these...
Multilevel inverter topologies are an alternative for a wide range of low voltage electrical drives. They can reduce power semiconductor losses, voltage transients at the motor windings, harmonic losses in the cables and common mode disturbance currents. In the voltage range below 1000 V highly optimized switches with lower losses are available. The paper compares the component losses (power semiconductor...
The BIGT is a Reverse Conducting IGBT device which combines functionality of a high power IGBT and fast diode on a single chip. In this paper, an investigation of the IGBT mode short circuit performance of the BIGT is carried out. The behavior of the BIGT under IGBT mode short circuit conditions is illustrated by measurements on a 3.3kV 1500A HiPak1 module and then supported by circuit and detailed...
Low-voltage MOSFETs are widely used in the synchronous rectifying stages of power supplies. To allow a high efficiency in light-load conditions, the power MOSFET not only needs to meet general requirements like low on-resistance, low gate charge and good avalanche capability, but must also have a low output capacitance and low reverse-recovery charge. The paper shows how those requirements were met...
Multilevel inverter topologies are an alternative for a wide range of low voltage electrical drives. In the low voltage range (<1000 V) highly optimised switches with lower conduction and switching losses are available. For 550 V DC link voltage the power semiconductor losses of a two-level VSI with 1200 V-IGBT and a neutral-point-clamped three-level VSI in the power range between 7 to 35 kW are...
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper investigates the influence of the gate drive on the switching characteristics of the device and design strategies highlighted.
This paper presents a recently introduced switching principle for emerging monolithic bidirectional devices. Based on the hypothesis that those switches may overcome conventional diode type solutions in power converters, an active self-switching process becomes compulsory. Its principle relies on the measurement of both voltage and current polarity, in order to allow a natural switching as commonly...
A gate drive circuit for a silicon carbide (SiC) JFET is introduced from the standpoint of application to power conversion circuit. This gate drive circuit enables normally-on JFETs as close as normally-off devices at high switching frequency. The voltage and current responses of the implemented circuit are discussed under loads at the switching frequencies over 1 MHz.
Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being...
Here the switching and conducting performance of a SiC-JFET, an Emitter-Switching Bipolar Transistor (ESBT) and conventional power semiconductors as MOSFET and IGBT with Si- and SiC-diode is presented. The variety of power semiconductors is growing and there is a need to get rules to select them for the application given. The structure and special characteristics of the new devices are explained....
Diamond has the most interesting and extreme thermal, dielectric and electronic properties of semiconductors. The benefits of using diamond for power electronic switch can be illustrated by a new figure of merit. The exploration of possible device applications for this material has been motivated by the significant advances in growth and electronic technologies of diamond. Our studies are focused...
An AC light dimmer topology using two voltage-controlled symmetrical switches is presented. After an introduction of the silicon structure of these new engineering devices, their conduction losses are compared to today technologies. Gate driver circuits are presented to fulfill EN55015 standard with low commutation losses. The impact of the recovery current is also discussed
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