The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Multilevel inverters are an alternative for a wide range of low voltage electrical drives. They reduce power semiconductor losses, voltage transients at the motor windings, harmonic losses in the cables and common mode disturbance currents. In the low voltage range (<1000 V) new wide-bandgap semiconductors (SiC, GaN) have the potential to reduce the conduction and switching losses in multilevel...
Multilevel inverter topologies are an alternative for a wide range of low voltage electrical drives. They can reduce power semiconductor losses, voltage transients at the motor windings, harmonic losses in the cables and common mode disturbance currents. In the voltage range below 1000 V highly optimized switches with lower losses are available. The paper compares the component losses (power semiconductor...
The paper presents the energy saving potential of induction machines by using variable rotor flux instead of commonly used constant flux. The efficiency optimized rotor flux depends on the actual load and speed of the motor. At low load it has to be decreased with reference to a pre-calculated lookup table. This table can be included in a field oriented speed control structure as reference value of...
Multilevel inverter topologies are an alternative for a wide range of low voltage electrical drives. In the low voltage range (<1000 V) highly optimised switches with lower conduction and switching losses are available. For 550 V DC link voltage the power semiconductor losses of a two-level VSI with 1200 V-IGBT and a neutral-point-clamped three-level VSI in the power range between 7 to 35 kW are...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.