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A fully CMOS integrated RF transceiver for ubiquitous sensor networks in sub-gigahertz industrial, scientific, and medical (ISM)-band applications is implemented and measured. The integrated circuit is fabricated in 0.18-mum CMOS technology and packaged in leadless plastic chip carrier (LPCC) package. The fully monolithic transceiver consists of a receiver, a transmitter, and an RF synthesizer with...
This paper presents a novel methodology for the design of image-reject mixers (IRM's). This innovative approach is based on statistical and structural optimization in order to achieve high image rejection ratio (IRR) and low power consumption. This methodology is put to work in the frame of a fully integrated low-power CMOS transceiver for short-range telemetry operating at the ISM-433 band. Two IRM...
Ultra wideband (UWB) radio technology has many advantages: i.e., ultra wide 7.5 GHz spectrum bandwidth, extremely high throughput, very low power, etc. This paper presents a single-chip low-power 3.1-10.6 GHz low-noise amplifier (LNA) designed for pulse-based full-band UWB transceivers, which features an improved shunt-series feedback topology to achieve desirable ultra broadband gain and noise performance...
A highly integrated triple band (800MHz/1.7GHz/2.1GHz) WCDMA transceiver IC which operates at low voltage (1.8V) is described. All functionalities are implemented in a single chip using a 0.18mum SiGe BiCMOS process. The direct conversion receiver consists of triple band preamplifiers, I/Q demodulators, channel select filters, and PGAs. The direct transmit upconverter consists of a modulator, a three...
Ultrawideband communications using impulse signal is recently one of the key technologies for wireless communications due to its feasibility to various applications. Ultra wideband (UWB) RF chaotic system, a modified UWB system, using noise-like signal has advantageous features including low power consumption, efficient power management, compactness, and robustness in multipath and thus lower price...
A 2.4-GHz fully-differential RF front-end on 0.18-mum CMOS technology for wireless sensor network (WSN) applications consuming 4.8-mW from a 1.8-V supply is presented. The direct conversion RF-front end comprises of low-noise amplifier (LNA), I/Q direct-conversion mixers, quadrature LO generator and LO buffers. By employing conventional source degenerated LNA, passive mixer, to eliminate flicker noise,...
A fully integrated 2.4 GHz CMOS transceiver IC for the low power wireless personal area network (WPAN) is reported. This is based on a dual-conversion architecture receiver and transmitter which are suitable for silicon integration. The frequency synthesizer offering 1.92 GHz and 480 MHz quadrature LO signals are also integrated on the radio chip. In the proposed transceiver, linearity is improved...
The 0.18 /spl mu/m CMOS direct-conversion dual-band triple-mode WLAN transceiver covers 2.4 to 2.5 GHz and 4.9 to 5.95 GHz and draws 78 mA in the receive mode and 76 mA in the transmit mode, from a 1.8 V supply both at 2.4/5 GHz. The system NF of 3.5/4.2 dB, the sensitivity of -93/-94 dBm for a 6 Mbit/s OFDM signal, and the EVM of 3.2/3.4% are obtained at 2.4/5.2 GHz.
A fast frequency/mode switching SSB mixer/amplifier topology is proposed for the implementation of low power multi-tone generator (MTG) in MB-OFDM UWB system. The proposed SSB mixer/amplifier topology is fabricated for the generation of mode-1 band center carrier with 0.18mum CMOS technology. The measurement result shows the 8.5ns mixer/amplifier mode switching time. The center carrier output power...
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