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An overview on the recent progress of Si insulated gate bipolar transistors (IGBTs) and SiC MOSFETs as key components in today's power electronic system is given. The state-of-the-art device concepts are explained as well as an outlook about ongoing and foreseeable development steps are shown.
Modern civilization is related to the increased use of electric energy for industry production, human mobility, and comfortable living. Highly efficient and reliable power electronic systems, which convert and process electric energy from one form to the other, are critical for smart grid and renewable energy systems. The power semiconductor device, as the cornerstone technology in a power electronics...
Wide-bandgap (WBG) power devices such as SiC devices can operate at higher switching speed, higher voltage and higher temperature. While the opportunities in performance improvement with WBG devices are clear, there are significant design challenges. For example, the fast switching speed and high dv/dt can cause increased level of electro-magnetic interference (EMI), current overshoot and cross-talk...
Although the hybrid switch consisting of high power Si IGBT and low power SiC MOSFET achieves reduction of losses and cost, there is a severe concern of its short-circuit capability due to its internal SiC MOSFET with small die size. Experimental study shows that the short-circuit capability of hybrid switch is limited by that of SiC MOSFET. The physical mechanism of short-circuit capability of SiC...
This paper presents the design and control of a three-phase ground power supply unit for aircraft servicing. A new mixed technology converter composed by a three-phase Silicon Carbide (SiC) full bridge unit and a three-phase full bridge IGBT unit connected across the same dc link is used instead of the conventional full bridge configuration. In order to satisfy the stringent requirements of the output...
A three phase power block based on novel 1.7 kV/450 A SiC-MOSFET is designed and tested. To benchmark the performance of the power block, a through comparison is done with currently standardized 1.7 kV/450 A Si-IGBT based three phase power block. Key performance indices, including power rating curves at different switching frequencies and power factors; temperature ripple at different fundamental...
With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
An original overvoltage mitigation technique is presented in this paper for Sic based motor drives, exploiting an open-end winding motor configuration. According to the proposed solution over-voltage occurring at the terminals of the motor phases is mitigated by driving the two inverters through a modified switching pattern including a suitable dwell time. No passive RLC networks are required, thus...
This paper proposes a hypothetic silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module for the medium voltage (MV) variable frequency drive (VFD). A peer-to-peer comparison between commercial silicon (Si) insulated-gate bipolar transistor (IGBT) and the proposed SiC MOSFET module results in some promising results to support the introduction of SiC power modules...
In this paper, the authors describe the design of an 80kW power converter for an electrostatic precipitator using SiC MOSFETs. The structure of the converter is based on the series parallel resonant topology, PRC-LCC, with a capacitor as output filter. This topology can cope adequately with the parasitic elements of the step-up transformer involved in the application. The SiC switches present lower...
This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled Active Neutral Point Clamped Converter (3L-TDANPC), which is implemented based on a hybrid utilization of Si IGBTs and SiC MOSFETs. The 3L-TDANPC converter can achieve high efficiency with limited number of SiC MOSFET modules while keeping balanced distribution among the...
The introduction in the semiconductor market of the SiC technology enables power designers the development of power converters with higher power density (W/m3) in comparison with the traditional converters based on Si power semiconductors. This work presents the redesign of a DC-DC converter, used in railway traction applications with full-SiC modules. The low current rating of the actual full-SiC...
The recently emerging SiC devices provide a promising solution to improve power converter efficiency and power density. However the expensive cost limited the widely use of SiC device. The parallel connection of SiC MOSFET and Si IGBT is introduced in this paper to utilize the advantage of this two different kinds of devices and proposed corresponding switching strategies. The switching loss and current...
This article proposes a power converter solution for 1.5 kV DC photovoltaic applications and benchmark the benefits of commercially available SiC MOSFETS for the system power efficiency. The circuit solution is based on a full power factor three-level active neutral-point-clamped converter featuring reduced numbers of high-frequency switched semiconductors. A combination of Si IGBT and SiC MOSFET...
DC transmission has a lot of merits compared with AC transmission. For example, the cost of the construction and the equipment is less than that of the AC transmission system. Besides, more energy can be transmitted in DC transmission lines. Recently, multi-terminal transmission lines are required urgently. For that purpose, the reliable DC transmission circuit breakers must be developed. As we all...
In this paper, design considerations for transitioning from a Si-IGBT based inverter to a SiC-MOSFET based inverter are discussed. An existing Si-IGBT power structure is modified using a footprint compatible SiC-MOSFET module, with changes made to the power structure and gate drive for the high PWM switching frequency required for SiC devices. Design issues such as inductance minimization, EMC mitigation...
Induction industrial welding is one of the most straightforward application for the power inverter. Practical industrial welders require at the same time power levels up to 1 MW while frequencies are in the range between 200–500 kHz, depending on the characteristics of the tube to be weld. SiC devices, as per its superior high frequency characteristics, are ideal components for this type of high power,...
The U.S. Department of Energy's Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced...
In this paper, compact power module design and evaluation method is presented for EV application. This method can help to design a high power density power converter.
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