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In renewable energy applications power conversion efficiency is major concern. This is especially true for grid-tie energy storage systems based on bidirectional dc-dc and dc-ac converters where power flows through these system components. Latest developments in power semiconductors technology significantly reduced switching and conduction losses in dc-dc and dc-ac converters allowing efficiencies...
Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a significant performance improvement on the switch level (specific on resistance, etc.) compared with Si devices. Well-known examples are SiC diodes employed, for example, in inverter drives with high switching frequencies. In this paper, the impact on the system-level performance, i.e., efficiency, power density,...
The Future Renewable Electric Energy Delivery and Management (FREEDM) Systems Center is a National Science Foundation (NSF) Generation-III Engineering Research Center (ERC) established in 2008 with the mission to develop the fundamental and enabling technologies necessary for a new and paradigm shifting power grid infrastructure, the FREEDM System. This paper will highlight the role of power electronics...
Photovoltaic (PV) inverters convert the DC current of solar generators into AC current and feed it into the grid. There are three basic inverter topologies: inverters with low frequency (50/60 Hz) transformer (LF), inverters with high frequency transformer (HF) and transformer-less inverters (TL). The European market is dominated by transformer-less types (80%), in Japan approx. 50% of the inverters...
Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the switching times and the efforts for the driving circuits are investigated. The focus is put on the influence...
The paper will sketch ideas as well as experimental evidence how SiC devices should be designed in order to be ideal partners for modern silicon devices. After a short introduction into SiC power semiconductors, examples will be described. Based on the performance description of SiC diodes it will be shown like the use of such devices as freewheeling diodes can open up new horizons for dynamic performance...
In this paper, some key technologies related to advancement of the IGBT module and IPM family, have been reviewed. Changing requirements from various application fields and projections of future technologies related to power modules that can comply with such needs are also discussed highlighting on newer power chip and packaging technologies. In the final part of the paper, discussions on status and...
System integration and high power density of monolithic and multi-chip designs are the driving force for the progress in power electronic systems. The whole system has to be considered and optimized to meet this target and to keep the overall ruggedness, sensitivity towards EMI and long term reliability, Silicon utilization system reliability and power units miniaturization are the key factors. Power...
System integration and high power density of monolithic and multi-chip designs are the driving force for the progress in power electronic systems. The whole system has to be considered and optimized to meet this target and to keep the overall ruggedness, sensitivity towards EMI and long term reliability, Silicon utilization system reliability and power units miniaturization are the key factors. Power...
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