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Micro-Raman spectroscopic technique has been employed to study the induced stress/strain by the metal microbumps in 3D-LSI Si die/wafer after wafer thinning and bonding, and the impact of bump spacing, bump size, bonding temperature and bonding force in the stress distribution in such a microbump bonded LSIs has been investigated. It is inferred that (i) the Si present at the interface (between CuSn...
Urinary tract infection diagnosis and antibiogram require a 48 hour waiting period using conventional methods. This results in ineffective treatments, increased costs and most importantly in increased resistance to antibiotics. In this work, a novel method for classifying bacteria and determining their sensitivity to an antibiotic using Raman spectroscopy is described. Raman spectra of three species...
Design and performance of a newly developed multi-wavelength, micro Raman spectroscopy system for non-contact and non-destructive characterization of semiconductor materials are introduced. The thickness and Ge content of Si1-xGex/Si were estimated from the multi-wavelength Raman measurement results and compared to those values obtained from X-ray diffraction (XRD) and X-ray reflectance (XRR) measurements...
The design concept of a polychromator-based multi-wavelength Raman spectroscopy system (MRS-300) which is designed to overcome the common issues with conventional Raman measurement systems is described. The system is specially designed for non-destructive, material and process characterization applications in the semiconductor industry. The performance of the MRS-300 system and non-destructive nature...
Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In...
A rapid trapping and detection method for clinical bacteria (Helicobacter pylori, H. pylori) analysis is designed and reported in this study. Different strain of H. pylori can be trapped in 3 dimension dielectrophoresis chip (DEP) under the condition of 20 mM PBS, voltage at 20 Vp-p and frequency at 300 kHz. H. pylori #238(Wild type) presents more and stronger functional group stretching and vibration...
The stress effect at the channel region of pFETs with compressive stress liner (c-SL) and eSiGe using replacement gate technology is firstly investigated in detail based on the combination of UV-Raman spectroscopy and 3D stress simulation. The gate length effect for the channel stress is confirmed by measurement and simulation. Moreover, the Ion dependence on the channel width is also investigated...
Damascene gate process enhances the drivability in shorter gate length region, as compared to conventional gate 1st process for pFETs with compressive stress SiN liner and embedded SiGe. The origin of the gate length effect is investigated for the first time by using the UV-Raman spectroscopy. Moreover, the relationship between channel strain and gate width for damascene gate pFETs is analyzed and...
We report the Raman, continuous-wave (CW) photoluminescence (PL) measurements of Ge(Si)/Si samples with an islands like morphology. The values of composition and elastic deformation of the self-assembled Ge(Si) nanoislands formed at 550degC were determined by Raman scattering spectroscopy. Due to larger islands size, and intermixing of Si and Ge, the PL peak is red shifted for longer time deposition...
Pseudomorphic Si1-xGex epitaxial layers have been grown on Si(100) at a low temperature using molecular beam epitaxy. Compressively strained grown layers have been characterized by high-resolution XRD, RBS and Raman spectroscopy. A 5-period SiGe/Si multiple quantum well structure has also been grown for infrared photodetector applications. The simulated and measured temperature dependent dark current...
ZnO nanoparticles (NPs) in the size range 7-40 nm have been synthesized by ball milling technique, and microstructural and photoluminescence properties of the NPs are studied by using varieties of techniques. Our results are compared with those of the commercially procured ZnO nanopowders. X-ray diffraction and high resolution transmission electron microscopy studies reveal a compressive strain in...
In order to overcome the speed limitation of electrical interconnects, we integrate ultra large scale integrated (ULSI) circuits with the electro-optics. Besides the modulator, both the light emitting diode (LED) and the detector are essential to achieve this goal. In order to get greater functionality, we integrate Si chip with the Si based electro-optics. For the time being, the light emitter is...
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