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Experimental gate capacitance (Cg) versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QW-MOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance (CQ) and centroid capacitance (Ccent). The nonparabolic electronic band structure of the InAs0.8Sb0.2 QW is incorporated in the model. The effective mass extracted from Shubnikov-de Haas magnetotransport measurements...
In this paper the computer simulation of the structure of point defects in CdTe is developed by the numeral solution of electron neutrality equation. The software presented contains lexical analyzer, which allows to construct, analyse and solve the electron neutrality equations of various type. The results of the performer calculations coincide well with experimental data, obtained from the high temperature...
Magnetotransport properties of the two-dimensional electron gas (2DEG) in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov-de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the 2DEG concentration increases and the SdH oscillation...
Magnetotransport study has been performed on AlxGa1-xN/GaN heterostructures at low temperatures and high magnetic fields. The magneto-intersubband scattering effect of the two-dimensional electron gas (2DEG) has been observed in the triangular quantum well at the heterointerface. It is found that the effective mass of the 2DEG have strong dependence on the magnetic field and the 2DEG density due to...
Transport, magnetotransport and magnetic properties of structures with GaAs/In0.17Ga0.83As/GaAs quantum well (QW) in GaAs have been measured in the temperature interval 4.2<T<300 K. The structures were delta-doped by Mn and carbon to provide magnetic properties and enhanced p-type conductivity. The ferromagnetic phase up to 400 K was detected by SQUID magnetometer. Anomalous Hall-effect and...
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