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For high temperature automotive application, IC products are required to pass stringent high temperature storage stress test (e.g. 5000hrs at 150 deg C), hence requires reliable wire bonds. Such requirement is especially challenging with fine pitch Au & Cu wire bond (e.g. bond pad pitch >; 70um and bonded ball diameter <; 58um), more-so on low k wafer technology with bond-over-active requirement...
Wire bonding is the most applied technology to realize an electric chip-to-package interconnection and to provide electrical paths from and to the substrate for power and signal distribution. Established in the 1970s, wire bonding has been well documented and researched as a result of continuous process improvement and through the development of sophisticated, automated equipment over the years, [1-2].
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