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Structural and electrical properties of ZnO:Ga thin films synthesized by RF sputtering and N-doped by ion implantation were studied. The ZnO films with an addition of 2 at% of Ga were deposited on Corning glass substrates to a thickness of 0.5 μm. Nitrogen ions were implanted at 180 keV, to 1015 - 1016 at/cm2, at room temperature. It was found that the as-deposited ZnO films have a polycrystalline...
Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2O3(2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence...
Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested...
Nano Ga-doped ZnO(GZO) thin films with different Ga doping concentration (1, 3, 5, 7at%) were deposited on glass substrate by RF magnetron sputtering. The influence of Ga doping concentration on the microstructure, morphology and thermoelectric properties of GZO films was investigated. It is found that all the films are polycrystalline with C-axis preferred orientation. the crystal size are 22, 15,...
ZnO thin films have been deposited on (0001) sapphire substrates using potassium (K) as a dopant by radio frequency magnetron sputtering technique. The electrical properties, crystallinity and surface morphology of as-grown ZnO films are investigated by Hall measurement, X-ray diffraction and atom force microscopy. Results show that the structure and electrical properties of p-K:ZnO films are strongly...
To estimate the fluorine thermal stability of fluorine doped zinc oxide (ZnO:F) films, ZnO:F films were prepared by co-sputtering zinc oxide(ZnO) and magnesium fluoride (MgF2) targets under different sputtering powers. The prepared films were tested with a thermal desorption system heated from room temperature to 500degC. Four elements: zinc (Zn), oxygen (O), magnesium (Mg) and fluorine (F) from ZnO:F...
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