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In this study, it is found that the temperature measurement using body diode of SiC-MOSFET is greatly affected by the bias voltage between gate and source, unlike using body diode of Si-MOSFET. We introduce a method that it is possible to measure the junction temperature correctly by applying a suitable negative bias between G-S. Hence, the heat resistance evaluation method for the SiC power module...
Isolated DC-DC conversion with high power density is widely achieved by DC to high-frequency AC conversion, followed by isolation and high frequency rectification. Selection of high-performance diodes for such high-frequency rectification is challenging as a trade-off is often required among numerous conflicting parameters. Three high performance diodes, namely, an ultra-fast silicon diode, a super...
As we known, the measurement of junction-to-case thermal resistance (Rth-JC) of semiconductor power devices is very important. In this paper, an approach of transient dual interface method (TDIM) with gate-source voltage (Vgs) as the temperature sensitive electrical parameters (TSEP) was investigated for the measurement of Rth-JC of packaged SiC MOSFET. The measured Rth-JC value of packaged SiC MOSFET...
Thermal resistance evaluation of silicon carbide (SiC) power module for high-temperature operation has been performed in order to define the precise thermal resistance in real package structure. Transient thermal analysis method using SiC-Schottky barrier diode (SBD) is applied to measure the thermal structure function in wide temperature range from 50°C to 250°C. The module structure consists of...
The paper deals with the thermal properties of Ag sintered layer used as interconnect material for SiC die assembly to DBC substrate. In our investigation an IR camera were used for measurement of thermal properties of Ag sintered layers. The changes of thermal conductivity were measured in temperature range from 69°C up to 221°C. The thermal conductivity of Ag sintered layers thickness 15 μm, made...
In this paper, junction temperature behavior of Silicon Carbide (SiC) JFET is investigated both in room temperature and high ambient temperature. The mechanism of thermal runaway of commercially available SiC JFET device is analyzed. The experimental results reveal reduced risk of thermal runaway under high ambient temperature for SiC JFET devices.
Devices based on wide-band gap semiconductors such as SiC, GaN allow high power densities, size reduction, high integration and elevated operating temperatures. In this study, we present solutions for high temperature power packages based on finite element simulations and experimental approach. Analytical methods are used to investigate the best choice among the different selected materials for the...
This paper presents new results revealing the electrical properties of the silicon-on-polycrystalline silicon carbide hybrid substrate. The thermal resistance in the substrate was measured and compared to simulations and is linked to the measured reduced self-heating in LDMOS transistors. The mobility in the device layer was extracted and shows slightly lower values in the hybrid compared to the SOI...
A novel CNT/SiC/epoxy composite was proposed and demonstrated as adhesive joining element and heat dissipation media for HB-LEDs. Junction temperature, luminous intensity and forward voltage were measured for varied combinations in the composites. The experimental results showed that the epoxy with 30 wt% of SiC and 5 wt% of MWCNTs had the best thermal properties. Comparing to commercial epoxy, the...
Power electronics are reaching the temperature limits of silicon; therefore alternative materials such as silicon carbide (SiC) are currently being explored. An all SiC 1.2 kV, 400 A dual MOSFET power module has been fabricated and tested for thermal performance. The module was designed as a dropin replacement for standard commercial modules with an integrated liquid cooling system that reduces thermal...
The paper deals with the nonlinear compact thermal model of SiC power semiconductor devices based on the Cauer network. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the Schottky diode and MESFET transistor at their various cooling conditions.
The paper deals with modelling non-isothermal characteristics of SiC power Schottky diodes. In the paper the D.C. electrothermal model of the investigated devices included the self-heating phenomenon was presented and experimentally verified. The model was formulated for SPICE. The evaluation of the accuracy of the elaborated model has been performed by comparison of calculated and measured D.C. characteristics...
This paper presents some analytical findings of thermal investigations on silicon carbide and that-based devices with the view to the prospective change-over to a novel silicon carbide MEMS technology. A SiC-AlN composition is discussed as an attractive candidate for improving the thermal resistance and the reliability of microsystems for various purposes. A series of temperature, pressure, acceleration...
Thermal and reliability studies on SiC JFET transistors need estimation of junction temperature. The paper depicts results obtained with two thermal indicators (on-state resistance and gate to source voltage). These two thermal indicators may be used as indirect temperature sensors during heating phases of the transistor. This temperature allows estimating the thermal impedance (Zth) of the device...
The performance of a 700 Watt SiC SIT device using state of the art silicon carbide technology is described. Operating under pulsed RF conditions of 1mS pulse width, 20% duty cycle, it can deliver 700 Watts peak power at 96 volts. More than 50% efficiency and 8.2 dB gain are attained over the bandwidth of 400-450 MHz. The power density is 1.9 watts/mil. Thermal resistance is 0.19degC/W. The junction...
Thermal characterization of the new Si-on-SiC hybrid substrate has shown thermal properties superior in comparison with SOI. The thermal resistivity was shown to be a factor of four lower, and the lateral thermal spread was much more efficient, as is explained by the excellent heat conductivity of the SiC substrate. These results correspond well to the absence of MOSFET self-heating effects for the...
In the paper the problem of modelling DC characteristics of SiC power Schottky diodes with thermal effects taken into account is considered. The electrothermal model of the investigated devices was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected SiC power Schottky...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
The complete design strategy (mechanical and electrical) of a three-phase 100 kW power converter utilizing silicon carbide (SiC) and silicon-on-insulator (SOI) electronics is presented. The design philosophy focuses on size reduction through high temperature operation (200+ ??C junction temperature). A low power, proof-of-concept prototype operating at 4 kW has been built and tested. The preliminary...
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