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Low-temperature silver sintering technology, which has been proven to be a promising die-attach solution, was extended to bonding large substrates. Strong bonding strengths for substrates greater than 25 mm × 50 mm were achieved by sintering a nanosilver paste at temperatures below 270°C with less than 5 MPa pressure. To characterize thermal performance of the substrate-attach interface, we applied...
This paper presents in detail the design and the practical realization of a dedicated stand for the transient thermal measurement of electronic devices. The stand is equipped with the dual cold plate cooling system containing thermoelectric modules which allow the precise control of boundary conditions, hence enabling a practical realization of the variable thermal resistance. This stand was thoroughly...
In power switch assemblies the heat is removed through laminate stacks containing thermal interface materials (TIM). Some information on a TIM layer quality can be obtained by dedicated thermal conductivity testers, but the in-situ behavior of a TIM in the assembly may significantly differ. Thermal transient testing yields partial thermal resistances of these layers in the stack and can provide temperature...
Modulation method and the device for thermal impedance measuring of power COB LEDs and measurement results are described. The measurements were performed by generic modulation method that implies heating a device under test by power varying harmonically. A pulse sequence of heating current, with the pulse length varying harmonically, is passed through the device under test. The p-n junction temperature...
This paper presents the comparison between the simulated and measured thermal resistance of InP Double Heterojunction Bipolar Transistors (DHBT). 3D thermal simulations were carried out in order to compute the temperature distribution across the full structure due to a constant power excitation of devices with up to 8 emitter fingers. The surface temperature profile was then used to compute the average...
As we known, the measurement of junction-to-case thermal resistance (Rth-JC) of semiconductor power devices is very important. In this paper, an approach of transient dual interface method (TDIM) with gate-source voltage (Vgs) as the temperature sensitive electrical parameters (TSEP) was investigated for the measurement of Rth-JC of packaged SiC MOSFET. The measured Rth-JC value of packaged SiC MOSFET...
Thermal interface materials (TIMs) are used in power electronics packaging to minimize thermal resistance between the heat generating component and the heat sink. Thermal greases are one such class of TIMs. The conformability and thin bond line thickness (BLT) of these TIMs can potentially provide low thermal resistance throughout the operation lifetime of a component. However, their performance degrades...
Experiments have been performed to characterize the thermal resistance of thermal interface materials that deform under mechanical loading. TIMs in this category include elastomeric silicon rubber based TIM gap pads and pourable paste-like composite materials that set when cured. This paper reports on extensive experiments performed to characterize the overall thermal resistance of TIM pads composed...
In-situ junction-to-case thermal resistance (Theta JC) measurements are sensitive to a number of test condition factors. In this paper, the effect of electronic package die temperature on junction-to-case thermal measurements is reported over a nominal use condition temperature range of 40 to 105°C. Multiple parts were tested under a variety of boundary conditions to assess the impact of die temperature,...
A method for determining the thermal resistance of high power LEDs is described. Unlike more complicated systems, this method simply uses a fast pulse to determine the junction temperature under actual operating currents, combined with a conventional thermocouple to measure the mounting face temperature. The literature can be somewhat confusing in describing the thermal resistance of an LED. Often...
In order to develop power electronic systems with high power densities the performance of the cooling system has to be increased. Thereby, the thermal resistance of power semiconductor modules is an important design aspect. However, the thermal resistance of modules is influenced by cross-coupling effects which are dependent on the module layout and the heatsink. These cross-coupling effects are not...
Life prediction of insulated gate transistor is often based on the damage of unilateral factors such as solder layer or bonding wire, and there is little mention of the relationship between the damage and the increase of thermal resistance. In this paper, firstly the damage of the modules in different working conditions is quantified and compared based on the fuzzy theory, and the relationship between...
A 3-phase high power inverter bridge for a 500 W PEDELEC motor fabricated using a novel embedding technology was benchmarked against a classically designed module using MOSFETs in a B6 Bridge. By operating each MOSFET individually in reverse mode and measuring the forward voltage during high current operation and after switching to a measuring current of 50 mA the junction temperature has been measured...
Thermal properties of building envelope is a fundamental key to building energy design or in evaluating the energy performance of an existing building. In-situ measurements are often constrained by the low-temperature difference between the indoor and outdoor side of a building, thus requiring a longer measurement time and a higher cost. This paper attempts to overcome these obstacles by measuring...
We studied power dissipation in 1L MoS2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS2-substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.
The channel temperature (Tch) and thermal resistance (Rth) of Ga2O3 metal-oxide-semiconductor field effect transistors were evaluated for the first time through electrical measurements complemented by device simulations that incorporated experimental Ga2O3 thermal parameters. The analysis technique was based on a comparison between DC and pulsed drain currents (IDS) at known applied drain biases (V...
Because of a rapid growth of worldwide energy consumption an economical use of power is a necessity to ensure the supply reliability. One key technology to realize sparing energy use is power electronics. The cost of power electronic devices became an important aspect in this application due to its broader use compared to the past. In recent years, high efficiency at a given lifetime with low system...
A multi-chip stacked package using through silicon-vias (TSVs) still has the reliability concerns due to tremendous number of TSVs and micro-bumps in the stacked chips. Cu-filled TSVs may bring about process-induced failures as copper protrusion or copper diffusion into silicon lattice. Micro-bumps have various failure modes such as non-wet, bump cracking, and head-in-pillow joints, which are obviously...
Until now, there has not yet been a standardized method for the LED module thermal resistance measurements. This directly affects the lifetime assessment of the LED modules. By testing and studying the temperature coefficient of the LED modules with different structures, it is found that the temperature coefficient of the LED module follows a linear relationship with voltage when an appropriate test...
The investigations presented in this paper illustrate the problem of modelling the average value of the convective heat transfer coefficient in the case of a free convection cooled power device with a heat sink. The total junction-to-ambient thermal resistance is dominated then by its component reflecting the heat exchange with the ambient at outer surfaces of the heat sink. Therefore, the proper...
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