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Gallium Nitride has shown its potential over traditional Silicon devices with low switching and conduction losses. However, fast switching transition poses great challenges in dynamic device characterization due to sensitivity to parasitics and high requirement in testing equipment. An accurate switching behavior characterization method is proposed in this paper with loop inductance minimization and...
In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curvetracer...
An analytical model is proposed in this paper to calculate the switching loss of low voltage enhancement mode Gallium Nitride high electron mobility transistors (eGaN HEMTs). The switching process is illustrated in detail. The switching loss is obtained by solving the equivalent circuits during the switching transition. A good agreement is shown between the analytical model and Spice simulation results...
Double pulse tester (DPT) is a widely accepted method to evaluate the switching behavior of power devices. Considering the high switching-speed capability of wide band-gap (WBG) devices, the test results become significantly sensitive to the alignment of voltage and current (V-I) measurement. Also, because of the shoot-through current induced by Cdv/dt, during the switching transient of one device,...
In 3L-ANPC VSCs the application of additional active switches inverse to the NPC diodes enable additional switching states and commutations. They are used to overcome one important disadvantage of the 3L-NPC VSC - the unequal distribution of semiconductor losses. With an accurate switching model (obtained directly from the measurements) it is possible to improve the junction temperature distribution...
This paper proposes nondestructive current measurement for surface mounted power MOSFET on VRM board using the micro-magnetic probing technique to facilitation discussion of the self-turn-on phenomenon. A notable feature of the proposed technique is that the sensor part is much smaller than that of conventional methods because this method measures the intensity of a partial magnetic field caused by...
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