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In this paper, we present a study on ANSYS strain analysis and MBE growth of CdTe epilayers on GaSb substrates. The ANSYS simulation result shows that GaSb performs much better than other alternative substrates, e.g. GaAs. To verify the simulation results, CdTe buffer layers were grown by MBE on GaSb, which show material quality comparable to or slightly better than that on GaAs substrate. Furthermore,...
This paper presents the solar cell grown on misoriented GaAs substrate (2- and 15-off) by metalorganic chemical vapor deposition. The crystalline quality of the solar cell is determined by X-Ray reciprocal space mapping (RSM). RSM results show that the crystalline quality of ...
GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained...
Using migration enhanced epitaxy nucleation followed by molecular beam epitaxy bulk growth on pristine, intentionally offcut Si(001) substrates, we have produced high-quality GaP/Si virtual substrates, successfully demonstrating full control and elimination of heterovalent nucleation-related defects (antiphase domains, stacking faults, and microtwins). These virtual substrates provide a pathway to...
We have investigated InAs quantum dots (QDs) on strained GaAsSb barrier layer in different Sb compositions. Use of Sb incorporated barrier layer for QD growth gives better quantum dot properties such as density, lateral size and uniformity. Growing GaAs0.89Sb0.11 results in a doubling of QD density and a 50% decrease in size of the QDs compared to growth on GaAs. Also, size distribution of QDs became...
InAs patterned QDs (PQDs) preferentially nucleate on faceted GaAs pyramidal buffers using selective area epitaxy by metalorganic chemical vapor deposition. The photoluminescence (PL) wavelength is shown to be controlled by a single growth parameter, the growth time, without affecting the density of PQDs. Strong room temperature PL emissions over 1.5 mum from PQDs are demonstrated. The long wavelength...
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