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This paper discusses direct growth of graphene on the interdigital electrodes for MEMS supercapacitor application. In addition, a high quality graphene was grown by using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) at temperature of 1000°C at various deposition time from 2–10 minutes at fixed power of 40 Watt. The graphene growth structure on the interdigital electrodes was...
We propose an extension and improvement to reliability predictions in epitaxially grown 3C-SiC cantilever beam MEMS by utilizing dynamic Raman spectroscopy to allow the gathering of Weibull fracture test data to be done directly on devices thereby taking account of actual geometrical tolerances, dynamic load conditions and effects from the microfabrication process due to high lattice and thermal mismatch...
Nanodiamond with dielectric strength greater than 2MV/cm was grown by microwave plasma enhanced chemical vapor deposition and used as a leaky dielectric film for RF MEMS capacitive switches. Nanodiamond films grown by MPECVD were compared with Si3N4 films deposited by RFPECVD by means of transient current measurements. Nanodiamond was characterized by SEM, AFM and Raman spectroscopy for correlation...
This paper presents the limitations of the helium leak test when applied to typical MEMS packages. Hermeticity testing using FTIR and Raman spectroscopy are investigated with a view to overcoming the limitations of the helium leak test method. Hermeticity testing using FTIR is successful demonstrated for low cavity volume MEMS and glass packaged devices. Raman spectroscopy also improves on these limitations...
Large area synthesis of graphene has been realized on top of a nickel-coated micro platform using the Micro Chemical Vapor Deposition (Micro-CVD) system. The capability of ultra-fast heating and cooling provided by the MEMS platform is crucial for the controlled growth of graphene. Theoretical analysis shows that cooling rate is about 4 orders of magnitude higher than the conventional CVD system....
We investigate C60, C60(OH)24, C60(F3)12, C60Cl2 and analyse the stability of these derivatives upon processing in sol-gel, spin-coating, spraying, dropping and evaporating procedures to obtain thin films for possible microsystems application. We use X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Near Edge X-ray Absorption Fine Structure...
This paper describes an experimental analysis method for evaluating surface stress distribution in single-crystalline silicon (SCS) microstructures using laser Raman spectroscope. A biaxial tensile tester designed for film specimens was employed to apply uni/biaxial stresses to SCS specimen having 270-nm-high, 4-mum-square SCS convex structures in the gauge section. As reported in Transducers 2007,...
We present spatially resolved Raman studies on individual single-walled carbon nanotubes (SWNTs). Samples were comprised of microheaters with integrated and suspended SWNTs. We found the phonon frequency to depend on temperature by domega/dT = -0.0305 cm-1/K. The highest measured local temperature in a SWNT was about 1000 K. Further studies emphasize the effect of temperature on the energy shift of...
This paper reports on the use of Raman spectroscopy to characterize the motion of high frequency MEMS/NEMS. The change in Raman signal from a device driven into resonance at 101 KHz was used to indicate the mode shape at that frequency and the strain induced during the oscillation. The results are in good agreement with a finite element model of the structure. The results were also used to predict...
Many of the sampling methods used in oceanographic sciences today date back decades, if not centuries. Although there has been a marked change in how sampling for chemical oceanography is carried out it still relies on taking samples of seawater from a research vessel in most cases. Assessing processes on small timescales as well as transient events requires higher temporal and spatial resolution...
This paper describes Raman spectroscopic stress analysis of single crystal silicon (SCS) microstructures for development of reliability evaluation technique utilized for silicon-based microelectromechanical systems (MEMS). An in-house tensile tester was employed to apply a uniaxial tensile stress to the SCS specimen with a 270 nm-height, 4 mum-square SCS boss in the gauge section. Raman spectra on...
Several piezoresistive micro accelerometers have been commercially used, nevertheless, their sensitivity is not high enough for some special applications. A novel 'piezoresistive' micro accelerometer based on resonant tunneling diode (RTD) is proposed in this work, it is reported to be of higher sensitivity. To preliminarily study such a structure as well as the RTD, a testing system is designed and...
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