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Power electronic converters use semiconductors to satisfy the needs of different applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can be processed virtually without defects. However, the limits of Si are being reached and in consequence, Si based semiconductors have limited voltage blocking capability, limited heat transfer capability, limited efficiency and maximum...
The current–voltage characteristics of planar Ni/Au Schottky diodes fabricated on top of AlGaN/GaN structures with two different surface miscut, 0.5 and 2°‐off, were measured at elevated temperatures of up to 580 K and then discussed. The Schottky contact parameters, such as ideality factor (n) and barrier height (φb), were extracted by a commonly used thermionic emission approach, combined with...
Due to the mass consumption of fossil fuels since the 20th century, the automotive industry is facing various issues, such as the depletion of fuel resources and worsening air quality. Power semiconductor devices can help to resolve these issues by facilitating the development of technologies to save energy and diversify fuel usage. This paper describes the requirements and outlook for power semiconductor...
This paper reports the performance and electrical characterization results of high voltage Polarization Superjunction (PSJ) GaN Schottky Barrier Diodes (SBD) on semi-insulating 6H-SiC substrate for the first time. Fabricated PSJ SBDs with drift length of 25 μm show low on-set voltage of ~ 0.4V, high reverse blocking voltage (VBR) of ~ 2400V, specific on-state resistance (RON.A) of ~ 14 mΩ.cm2 and...
To achieve the highest power conversion efficiency, heterogeneous chip-scale integration of silicon-based and GaN-based power switches with SiC power diodes, silicon CMOS control IC, MEMS inductor and micro microchip supercapacitor assembled using advanced packaging and microcooling is reported.
As wide bandgap devices begin to become commercially available, it is becoming clear that electrical efficiency improvement is one of the key drivers for their adoption. For RF applications, GaN HEMTs allow the use of highly efficient class E circuit topologies demonstrating high powers of 63 Watts at 2 GHz with 75% power added efficiency. In broadband WiMax applications, GaN HEMTs offer very wide...
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