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The current–voltage characteristics of planar Ni/Au Schottky diodes fabricated on top of AlGaN/GaN structures with two different surface miscut, 0.5 and 2°‐off, were measured at elevated temperatures of up to 580 K and then discussed. The Schottky contact parameters, such as ideality factor (n) and barrier height (φb), were extracted by a commonly used thermionic emission approach, combined with...