The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper reports a 20 W Ka-band GaN high power MMIC (Monolithic Microwave Integrated Circuit) amplifier under continuous wave (CW) operation. The one-finger large signal models were made to take account of both the phase difference of RF gate voltage at a gate feeder and thermal effect. By using this model, the gate pitch length of unit cell transistor was optimally designed to obtain maximum output...
The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using...
This paper reviews applications of artificial neural networks (ANNs) to several distinct problem areas that arise in compound semiconductor device modeling and characterization. Properties and corresponding benefits of ANNs for these applications are presented culminating in an accurate large signal-model of GaN HEMT transistors (with thermal and trapping effects). Smooth functional approximations...
A 3-stage wideband power amplifier (PA) using a 0.15 pm gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) process from NRC is designed, fabricated, and measured. After characterization of the high electron mobility transistor (HEMT), a non-linear model was created from the measured data for use in the design. The reactively matched 3.8 mm × 1.8 mm PA also uses resistive elements...
This paper will present the recent development of large-signal modeling cum PA design based on Dynax GaN HEMT devices. A modified Angelov model is used to model the pulse I-V data. Improved modeling results to address the trapping effect will be given together with new model parameter extraction methodology. A new Large Signal model purpose with trapping effect. Design Power Amplifier in the purpose...
This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an NVNA and can be used in a circuit simulator as non-linear models. However, for very high power devices, the NVNA and its required peripheral components...
A systematic methodology for designing and implementing a broadband high-efficiency Class-E GaN power amplifier (PA) is proposed. The non-linear model of the GaN device is utilized to prescribe the optimal output impedance for broadband Class-E operation. The impedance of the output-matching network at the fundamental and harmonic frequencies is considered and optimized to cover broadband operation,...
Wide bandgap devices (WBGs) allow Power Factor Correction (PFC) circuits to operate at MHz frequency which leads to a better power density. Compared with kHz operation, MHz PFC in critical conduction mode (CrM) yields larger inductor valley current during the switch soft turn-on. Moreover, the input current distortion near grid voltage zero crossing has not been taken into account in the traditional...
The article presents the results of the design of GaN phase shifter for MIMO-based antennas. The optimization and simulation for each operating frequency 0.1–31.5 GHz was performed along with simulation of effect of capacitance mismatch on phase shifter parameters. The phase shifter is designed as a switchable high-pass filter that provides a 90° phase shift with minimum insertion losses at the operating...
Currently, photovoltaic (PV) grid inverters include two sorts, isolated type and non-isolated type. One of the main problems of the isolated PV grid inverters is common mode (CM) noise. This paper introduces a dual Buck inverter for the purpose of the suppression of CM current in PV grid inverter. Compared with traditional full bridge inverter, this topology has simple structure, high efficiency,...
With the fast-switching devices like GaN HEMT applying in power converters, the converters achieve higher switching frequency, higher efficiency and higher power density. As a result of the fast switching edge and high commutation speed, the issues like electromagnetic interference (EMI), overvoltage, gate protection become daunting tasks. The active gate control technique has been verified on the...
A model including effects of distributed gate in High Electron Mobility Transistors (HEMTs) is presented. An expression for equivalent gate impedance is derived for general structure described by [Z] matrix, therefore it can be applied to any structure that has similar distributed nature.
A Class-F 5 – 6 GHz 10 W Power Amplifier was designed with Qorvo's T2G6000528-Q3 GaN transistor using a model developed by Modelithics™. The core of this device is a 10-W die constructed with Qorvo's proven QGaN25 production process that is optimized for high power density and drain efficiency. The optimization design process involves producing model load-pull contours to identify area of loading...
Increasingly stringent requirements for higher power density and efficiency have driven development for lower on-resistance (Ron) and gate charge (Qg) power transistors. Gallium Nitride (GaN) and Silicon Carbide (SiC) are good contenders for replacing conventional Si power transistors. This work attempts to develop a driver IC to fulfil specific needs of Gallium Nitride Gate Injection Transistor (GIT),...
The ElectroLuminescent (EL) panel is an emerging backplane lighting technology for advertising displays and facade (building) decoration. Compared to conventional lighting technologies, the major advantages of the emerging EL panel include large panel format (e.g. >100m2), significantly more-even illumination uniformity, (mechanical) flexibility, thinner form-factor, etc. As EL lighting is emerging,...
A new parasitic elements extraction technique for GaN HEMT transistors on Si substrate is presented. This technique is based on the use of two de-embedding GaN structures: open and thru-short. The equivalent circuit models along with the extraction procedure are detailed. A very good agreement between measurements and simulations validate the developed extraction method.
This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology...
A new large-signal I–V model for GaN HEMT is presented in this paper based on the operational principle of devices and the traditional Angelov nonlinear I–V model. The least squares method and genetic algorithm are used to optimize the parameter extraction, and MATLAB is used to realize it. The simulation result fits well with the measured data, and the extracted model parameters have certain physical...
In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT is very promising for high power application, but we push device to the limits, so many issues are becoming critical. For example, access resistances Rs, Rd in high power GAN HEMT are bias and temperature dependent - their extraction from cold FET measurements can lead to over optimistic prediction...
Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.