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Data retention characteristics of aggressively scaled high-k interpoly dielectrics (IPD) with a fully planar stacked cell are thoroughly investigated. Using high temperature retention experiments of devices programmed at threshold voltages comparable to those used for multi-level cell (MLC) operation and reduced equivalent oxide thicknesses (EOT), we show that retention behavior simply depends on...
We study heavy ion irradiation effects on capacitors with the structure of a Floating Gate Flash cell. We demonstrate that the modifications of the capacitors electrical characteristics observed after irradiation depend on the physical position of the defects produced by ions into the dielectric. In particular, we focus our attention on the leakage current produced by ion irradiation. We evidence...
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials...
We present here a statistical Monte Carlo (MC) simulator modeling leakage currents across SiO2/high-kappa dielectric stacks. We show that simulations accurately reproduce experimental currents measured at various temperatures on capacitors with different high-k dielectric stacks. We exploit statistical simulations to investigate the impact of high-kappapsilas traps on leakage current distribution...
In this letter, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with conventional oxide/nitride/oxide (ONO) IPD. Regardless of deposition tools, drastic leakage current reduction and reliability improvement have been demonstrated by replacing ONO IPD with high-permittivity (high-kappa) IPDs, which is suitable...
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