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A new multiple-gate poly-Si thin-film transistor (TFT) with a bottom field plate (FP) is proposed. The FP disperses the high current density away from the top corner of the spacer channel with the highest electric field, leading to an improved kink effect. Moreover, owing to an inversion layer induced by the FP at the bottom region of spacer poly-Si channel, a higher on-state current is achieved....
We proposed a novel CTF memory structure with surface patterned Si3N4 trap layers, in order to enhance the memory window and the performance for ultra-high density CTF devices. Due to the enlargement of surface memory-trap densities, the CTF devices with nano-scale surface patterns on the Si3N4 trap layer by NSL showed increased memory windows and improved program properties. In addition, the reasonable...
In this paper, we present the current status of GaN-high electron mobility transistor (HEMT) for power-supply-applications. Advantages of GaN HEMT are summarized with discussing required characteristics applying for power supplies. Then, we introduce our Enhancement-mode (E-mode) GaN MIS-HEMT technology. We focused on realizing both normally-off operation and high current density with high breakdown...
It is important for shrinking the mesa width of a channel region in a vertical InGaAs channel MISFET for carrying out high-speed operation and for obtaining a steep sub-threshold slope. Therefore, we introduced selective undercut etching after the dry etching of the mesa structure. In the fabricated device with 60-nm-long channel, the channel mesa width became 15 nm. The maximum drain current density...
We propose a vertical InGaAs MOSFET with hetero-launcher and undoped channel. In a previous trial of this particular MISFET innovation, the number of devices that achieved current modulation by gate bias was only 10% of the total number of the fabricated devices. This poor result was caused by loss of thickness of the gate dielectric. In the new version of this device, the gate stuck was fabricated...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
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