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This paper deals with dielectric charging phenomenon - a key failure mechanism for electrostatically actuated MEMS. Conduction mechanisms and trap properties of silicon nitride are investigated by current-voltage measurements on Metal-Insulator-Metal (MIM) capacitors and RF MEMS capacitive switches. Both structures show a similar behavior with two bulk-controlled conduction mechanisms: space-charge-limited...
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, small signal RF measurements and RF power measurements. In addition to the characterization results, we present a simulation study on how to improve the performance based on pure device...
In this paper, we report the influence of RF power on carbon- and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH4, N2O and C2F6 precursors. The deposited films are characterized by means of FTIR and XPS, revealing the coexistence of both ring and network frameworks as well as Si-C, Si-N, C-N, C-H and Si-O bonds. The dielectric constant (k) and deposition rate of the SiCON film...
This paper reports comparative reliability of the hot carrier induced electrical performance degradation in power RF LDMOS transistors after novel methods for accelerated ageing tests under various conditions (electrical and/or thermal stress). It is important to understand the effects of the reliability degradation mechanisms on the S-parameters and in turn on static and dynamic parameters. The analysis...
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