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Many types of micro-nanoscaled integrated circuits are designed and used in electronics fields. However they are often used without ensuring high reliability. Electromigration which is an atomic transportation phenomena due to high electric current density applied in metal lines is a critical problem in integrated circuits reliability. The passivated metal line has a threshold current density of electromigration...
Lateral current spreading is experimentally and theoretically investigated in stripe laser diodes. The influence of current spreading length to threshold current density is quantitatively analyzed. The factors of current spreading length that residual thickness, resistivity of upper cladding layer, injected current density are numerically calculated. It is found that effective current rate declines...
We investigate the temperature and pressure dependence of carrier recombination processes occurring in various GaAsSb/GaAs QW laser structures grown under similar growth conditions. Thermally activated carrier leakage via defects is found to be very sensitive to the strain induced interface imperfections. Nonradiative recombination is found to be sensitive to the number of QWs. A strain compensated...
Semiconductor membrane laser with high index-contrast waveguide is promising for achieving low power consumption operation. As a step to realize a current injection (LCI) type membrane laser, GaInAsP/InP lateral current injection type Fabry-Perot lasers with 400 nm thin core layer, including compressively-strained 5 quantum-wells were realized by 2-step OMVPE regrowth on a semi-insulating InP substrate...
Quantum cascaded lasers (QCLs) have many advantages compared with other types of semiconductor-based sources. Therefore, it is important to evaluate their characteristics theoretically. In this paper our aim is to develop a simple algorithm for this interesting type of sources. This algorithm describes a non-trivial evaluation of the most important characteristics. It is used to calculate the output...
Group IV elements and their alloys show poor light emission due to their indirect gap. Application of tensile strain in Ge lowers the ?? valley below the L valleys in bulk as well as in Ge nanowires. We present also our results on direct gap type I alignment showing direct gap at ~ 0.8 eV in Si1-p-qGep Cq (C <4%) active layers with Ge1-x-ySixSny as the barrier. We have chosen a composition to give...
Application of tensile strain in Ge lowers the G valley below the L valleys but the direct gap is reduced from the value in unstrained Ge. We considered Ge1-qCq (C <4%) active layers with Ge1-x-ySixSny as the barrier and estimated the range of compositions in the active and barrier layers to yield direct gap (~0.8 eV) type I alignment by using model solid theory. We have chosen a composition to...
This article discusses the fabrication of a quantum cascade laser by metal-organic-chemical-vapor-deposition (MOCVD). The emission spectrum of the fabricated laser was obtained. The threshold current density under pulse measurements was investigated against reciprocal cavity length.
A four-wavelength quantum cascade (QC) laser source that operates by using a single current channel is presented. The source includes two different heterogeneous QC lasers in two different waveguides, one with emission wavelengths of 7.0 mum/11.2 mum and the other with 8.7 mum /12.0 mum. Quantum cascade lasers with emission wavelengths of 8.7 mum, 11.2 mum and 12.0 mum have threshold current densities...
Large cavity, very low threshold single layer quantum dot laser diodes with threshold current density of 10 A/cm2, output power > 2 W, and very-low internal loss of 0.25 cm-1 are achieved at CW room-temperature. Mode-locked operation of a large cavity laser diode with 40 mum stripe width is demonstrated at 3.75 GHz repetition rate.
The effect of extraction barrier width on a resonant-phonon terahertz quantum cascade laser is studied using the Monte Carlo method. The width of extraction barrier is varied from 48 to 33 Aring. The calculated threshold current density increases monotonously with decreasing extraction barrier width, while the peak gain shows nontrivial behavior. The simulation results suggest an optimum extraction...
A lateral current injection laser with a thin (400 nm) core structure grown on a semi-insulating InP substrate was realized and a room-temperature (RT) pulsed operation was obtained. A threshold current of 105 mA, which corresponds to a threshold current density of 1.3 kA/cm2, was obtained for a 1.47 mm long Fabry-Perot cavity laser.
The authors demonstrate the achievement of InAs quantum dash lasers grown by molecular beam epitaxy (MBE) on InP (100) substrate. The lasers exhibit lasing wavelength at 1.55 mum by multiple stacked dash layers from two to five, with ground state lasing at room temperature. The threshold current density reaches a minimum value of 683 A/cm2 from double quantum dash structure, resulting from the trade-off...
An injector-less quantum cascade laser is presented, which is capable of concurrent light emission at two different wavelengths (6.4 and 7.6 mum) at 77 K. The maximum operation temperature is 340 K and at 77 K the laser threshold current density is 0.19 kA/cm2. A competing approach using a single active zone for dual wavelength emission is also presented.
We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 mum range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50 times 1250 mum2 broad area Fabry-Perot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength...
In this paper, high performance of distributed feedback quantum cascade lasers operation at 7.7 ??m and 8.4 ??m have been investigated. With a broad gain spectrum, the DFB QCLs employing different grating periods exhibit a wavelength span of 0.17 ??m at room temperature and total wavelength coverage of 0.33 ??m at various heatsink temperatures. For the 8.4 ??m DFB-QCLs with a high side mode suppression...
This paper presents simulations on InGaN-AlGaN and ZnCdSe-ZnMgSSe quantum wire lasers having excitonic transitions. We have found that the threshold current density (Jth) in a quantum wire laser is almost temperature independent when exciton binding energies are in the range of 30-50 meV. This behavior is like quantum dot lasers having free carrier transitions.
A spiral microcavity InGaAsP/InP laser diode is demonstrated with a threshold current density of ~500 A/cm2 from a tilted directional emission under continuous current-injection condition at room temperature.
Room-temperature continuous wave lasing in quantum dots covered with GalnNAs on GaAs substrate was attained at 1.31 μm with threshold current density of 0.4 kA/cm2 by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 μm with using a thin p-clad layer.
We have compared the performances of 980-nm InGaAs quantum-dot and quantum-well laser diode grown by molecular beam epitaxy. The quantum-dot laser diodes show superior performance to the quantum-well laser diodes in their lower threshold current density and temperature sensitivity.
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