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Effect of carbon nanotube pillar arrays' edge effect on field emission characteristics is first studied. The ratio of field emission current density at 5.733V/μm is about 55: 6.5: 1 which is nearly proportional to the edge ratio (50:5:1) for small, middle, and large sizes of CNTs' arrays. Besides, ultra low turn-on field (~1.4 V/μm), well emission image uniformity and stability of about ±6.52 % at...
Carbon nanotubes (CNTs) were grown by two different methods. The catalytic growth on a silicon wafer showed ultra high aspect ratios for the CNTs with extremely high field enhancement coefficients >25000 and a turn-on field of 0.36 V/μm, whereas the non-catalytic growth resulted in substrateless flexible CNT bundles with a simple gate electrode integration process. Results on an additional coating...
We compare energy relaxation in 1-D tunnel field-effect transistors (FETs) vs. thermionic FETs, focusing on carbon nanotubes (CNTs). In CNTs the strongest inelastic scattering process with optical phonons has very high energy, n??OP ?? 0.18 eV, three times higher than in Si. We find the energy relaxation rate in tunnel FETs is up to 20 times slower than in thermionic FETs for ~1000 ??A/??m current...
Presented application is based on the use of carbon nanotubes for biomolecular analysis using electrochemiluminescence (ECL) detection technique ([1]-[9]). ECL is the generation of light by electron transfer between species electrochemically generated. ECL research has led to the successful ultrasensitive analysis of biomolecules in solution and commercialisation of several generations of ECL analyzers,...
A compact model for the Carbon nanotube transistor (CNFET) is presented in this work. This simple model aids the first-order analysis for digital and analog design with CNFET. Based on the physical understanding of ballistic transport in the CNFET channel and tunneling at the Schottky barrier contacts, we develop a set of closed- form expressions that predict the device behavior with varying process...
We consider a 1.5 nm diameter (19,0) CNT for which zero-Schottky-barrier contacts have been demonstrated. The model device has a wrap-around gate, 2 nm ZrO2 dielectric, and the Fermi level of the metal contacts aligned with the conduction band of the source and drain. A number of different CNT lengths with various source/drain asymmetry are studied. A 40 nm length CNT with a 10 nm gate shows excellent...
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