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As IC technology advances to 16/14 nm and beyond, FinFET architecture with advantage of excellent leakage performance becomes main stream in IC industry. However, it also brings big challenges for integration and processes due to its very aggressive structure and profile, CD shrinkage, shadow effect and gap-fill difficulty. In this work, atomic layer deposition (ALD) metal films, including TaN, TiN...
As CMOS size scaling down, HKMG was introduced into CMOS manufacture process to replace Poly-SiON scheme earlier at 45nm node. In many HK materials, HfO2 was finally chosen for its good thermal stability, non-reacting with silicon, no water absorption. Both ALD and MOCVD could be used for HfO2 deposition. From film quality, ALD was the better choice for its film quality, since ALD as self-limited...
We report a new passivation technology based on atomic layer deposition (ALD) aluminum oxide for the GaN high electron-mobility transistor (HEMT). This new process markedly enhances GaN device's electrical performance including DC, and in particular the pulsed-IV characteristics. The achieved improvement is attributed to the outstanding interface between III-N and the ALD aluminum oxide resulting...
We have demonstrated high-performance deep-submicron inversion-mode InGaAs MOSFETs with gate lengths down to 150 nm with record Gm exceeding 1.1 mS/μm. Oxide thickness scaling is performed to improve the on-state/off-state performance and Gm is further improved to 1.3 mS/μm. HBr pre-cleaning, retro-grade structure and halo-implantation processes are first time introduced into III-V MOSFETs to steadily...
This paper presents a fabrication process to manufacture air-gap capacitively-transduced RF MEMS resonators. 2-port measurements show motional impedance (Rx) < 1.3 k?? and quality factor (Q) > 65,000 at 223 MHz in vacuum. The fabrication process involves depositing a dual-layer spacer of 10 nm of SiO2 and 90 nm of hafnia via atomic layer deposition (ALD) followed by oxide release. Nanometer...
LaAlOx with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlOx compare to La2O3 deposition. The mechanism behind improvement is proposed. ALD LaAlOx is found to be thermally stable up to 850??C anneal. Compared with Al2O3 blocking oxide control samples, the SONOS devices with LaAlOx blocking...
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