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Our group has designed a family of ASICs dedicated to the readout of semiconductor detectors for space applications, named IDeF-X standing for Imaging Detector Front-end [1]-[3]. IDeF-X BD is a new member of the family. It has been optimized for the readout of low capacitor and low leakage current Silicon or Cd(Zn)Te detectors. IDeF-X BD has been designed in the standard AMS CMOS 0.35 μm process technology...
The Ge0.9Sn0.1 photoconductor was fabricated with interdigitated structures on Si using a CMOS-compatible process. Temperature-dependent responsivity and specific detectivity were measured. The peak responsivity of 2.85A/W at 77K was achieved due to enhanced photoconductive gain.
It can be difficult to compare the merits of cameras using different sensor technologies using only the specifications typically provided by the manufacturers. The Noise Equivalent Irradiance (NEI) provides a normalized and unique parameter allowing a direct comparison. It is also fairly simple to calculate from the commercial specifications for a given wavelength and exposure time of interest. We...
The ALIBAVA is a compact and portable system for characterization of silicon microstrip radiation detectors. Actually, the ALIBAVA system is conceived to easily characterize multichannel semiconductor detectors, providing high sensitivity to low signals and high speed. The front-end electronics is based on a low noise ASIC with 128 input channels. Beyond its scientific and sensor R&D applications,...
This paper presents the design and performance of a new readout system for gaseous and silicon detectors built for the Minos nuclear physics experiment. A major constraint was to provide a multi-thousand channel, high performance readout system with low manpower effort and tight cost. This was achieved by the re-use of some earlier ASIC and front-end card (FEC) developments, the design of a new digital...
In this work, we present the design and the results of the analog channel of the readout circuit for the outer layers of SuperB Silicon Vertex Tracker (SVT). In these layers, the strip detectors have a very high stray capacitance and high series resistance. Therefore, the noise optimization was the first priority design concern. To fulfill the noise level and efficiency requirements, a compromise...
The design, manufacture, and test of a two-dimensional pixelated dual-threshold (DT) X-ray photon counting (XPC) detector is described. The DT-XPC detector consists of a 48 × 48-element silicon detector array hybridized to a custom readout integrated circuit (ROIC) using flip-chip bumping and bonding hybridization. The 520-micrometer-thick deep-depleted silicon detector elements are optimized for...
This paper presents the architecture, simulation and measurement results of a low power dual stage charge sensitive amplifier providing a time-over-threshold analog to digital conversion with linear transfer characteristic dedicated for readout of long silicon strip detectors. The key features of the presented solution are: very low power consumption (2 mW), linear transfer characteristic and low...
A new multi-modality imaging tool is under development in the framework of the INSERT (INtegrated SPECT/MRI for Enhanced Stratification in Radio-chemoTherapy) project, supported by the European Community. A custom SPECT apparatus, used as an insert for commercially available MRI systems, will enhance the treatment of brain tumors (primarily glioma) by offering more effective and earlier diagnosis...
High energy physics experiments in the intensity frontier push at the limit the detector resolutions. This is the also case for the upgrade of the MEG experiment that requires a design of a new drift chamber to track 52.8 MeV positrons with a single hit resolution of about 100 µm. In order to to compare the tracking performances of various prototypes implementing different cell configurations, a high...
The measurement of atmospheric radioxenon is an important tool for monitoring nuclear weapons testing. The development of new and improved xenon detection methods supports the monitoring program of the Comprehensive Test Ban Treaty Organization (CTBTO). In the current work we have developed a 24-element Si PIN diode detector to measure both the characteristic X-rays and the high energy mono-energetic...
The features of the 180nm TowerJazz1 CMOS technology allow for the first time the use of CMOS Monolithic Active Pixel Sensors (MAPS) under the harsh operational conditions of the LHC experiments. The stringent requirements of the ALICE Inner Tracking System (ITS) in terms of material budget, radiation hardness, readout speed and a low power consumption have thus lead to the choice of MAPS as baseline...
YBa2Cu3O6+x (YBCO) oxides are semiconductors (SC) at low oxygen content. IR detectors were processed with amorphous SC films, either planar or metal/YBCO/metal tri-layers. The response at 850 nm exhibited a low noise and fast pyroelectric behavior. THz detectors with planar antennas are considered.
We study scaling behaviour of terahertz responsivity and low-frequency noise of silicon MOSFET-based detectors. A set of 550-GHz resonant patch-antenna-coupled transistors with different channel widths varying from 320 nm to 1920 nm have been fabricated and investigated in temperature range from 77 K to 360 K. We find that the best sensitivities are achieved for narrowest devices without applied bias...
This paper presents a dual stage charge-sensitive amplifier designed for long silicon strip detectors. It allows to obtain a linear Time-over-Threshold processing using constant current feedback for charge and interaction time measurements when working with large capacitance sensors (e.g. Cdet=30 pF). The paper includes details of architecture and simulation results.
We demonstrate upconversion single-photon detection for the 1550-nm band using a PPLN waveguide, long-wavelength pump, and narrowband filtering. We achieve total-system detection efficiency of 30% with noise at the dark-count level of a silicon APD.
Backside preparation techniques have advanced to provide reliable IC performance for bulk silicon as thin as 10µm and less (here called moderately thin=MTSi). This opens many doors for optical localization techniques as photons > 1.1 eV can be detected through backside. Now, Si and InGaAs detectors can be compared directly for photon emission (PE) and this paper investigates in depth what is important...
We summarize several lines of investigation of foundry-processed patch-antenna-coupled Si MOSFETs as plasmonic detectors of THz radiation. First, we explore detection at frequencies as high as 4.3 THz, about one hundred times higher than the transit-time-limited cut-off frequency of the devices, searching for the fundamental limits of the detection principle. Then, we address the much-debated issue...
This document reports various aspects of silicon field-effect transistor structures response under high frequency continuous wave and pulsed irradiation. The detectors have been manufactured in standard 0.18 um CMOS technology. Their response show formerly predicted behavior and novel effects. Implementing a pair of non-antenna coupled gate is found to increase the sensitivity. Several structures...
Modern X-ray imaging applications require low noise and power, high rate readout front-end electronics. A widely used, dedicated for semiconductor detectors analog part of readout front-end architecture consists with charge sensitive amplifier and pulse shaping amplifier. To meet the requirements of pixel applications the simple architectures of front-end electronics and used amplifiers, low power...
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