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Back-propagation artificial neural network was developed to study the relationship between the aging rates of capacity in Ni/H battery and alloying elements of cathode materials. Leave-one out method was used to train the ANN model. Test results showed that the prediction performance of the ANN model is satisfactory: the scatter dots distribute along the 0__45??diagonal line in the scatter diagram,...
In this paper, we present a versatile MEMS gripper capable of two-dimensional manipulation. This is accomplished by a multiple degrees of freedom electrothermal actuator which can achieve independent in-plane and out-of-plane motions. The device is fabricated with the MetalMUMPs process, which offers silicon nitride, polysilicon, and nickel as the major structural materials. The electrothermal actuator...
High speed resonant cavity metal-semiconductor-metal (MSM) Schottky barrier photo detector is reported. Nickel is used as metal and quasi mono-crystalline silicon (QMS) with nanovoids is used as semiconductor material. QMS is sandwiched between thin nickel plates to obtain heterodyne characterization of MSM photo detector. QMS of suitable dimension shows significant enhancement of optical absorptance...
This paper presents an innovative structure based on 3 dimensional integration technology, where ultra thin inter layer dielectric enables a dynamic threshold voltage (VTH) control. A sequential process flow is proposed to fabricate 3D devices with dynamically tunable VTH. This ability can be exploited to design SRAMs cells with increased stability and surface density compared to planar technology...
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
Grain boundaries in multicrystalline silicon material grown from metallurgical feedstock, were investigated in detail using Electron Beam Induced Current (EBIC), Electron Back-Scattered Diffraction (EBSD) and Transmission Electron Microscopy (TEM) techniques. The EBSD analysis showed that small angle grain boundaries, with misorientation angles lower than 2°, gave high EBIC contrast, i.e., high recombination...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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