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MEMS resonators integrated with CMOS feedback networks have a potentially wide field of applications as oscillator circuits in communications and sensor systems. However, considerable advancements to this nascent technology are required to realize such a vision. We present a configurable CMOS chip which facilitates the development of MEMS-referenced oscillators, especially for timing and sensing applications...
In this paper, the design of a RF MEMS oscillator on a silicon-ceramic composite substrate using a high-Q Lamb-wave resonator as frequency-selective device is described. The MEMS resonator is designed on a 1.8 µm thick piezoelectric AlN layer, deposited on silicon using thin-film processes. The finite-element simulation results of the resonator structure are presented, and the derivation of the electrical...
This work presents the co-design and simulation of a self-excited MEMS-CMOS oscillator. The device consists of an electrostatic MEMS actuator, a DC source and a resistive circuit switched by the actuator's displacement. The MEMS device is modeled after an existing device. A CMOS circuit is proposed for the displacement detection and the switching mechanism. The oscillator is capable of sustaining...
This paper presents detail analysis of MEMS Fixed Fixed beam resonator. Force voltage analogy is being used here for calculating electrical two port equivalent circuit and its component values. Its resonance frequency tuning behavior analyzed by varying dc bias voltages ranging from 0 V to 10 V. The resonant frequency variation with varying elctode air gap is also prediticted.
Resonant mass sensors (i.e. microbalances) are commonly used in chemical and biochemical sensing, and their MEMS counterparts, based on MEMS resonators, are actively investigated. In this work, we present the design of an integrated electronic oscillator, based on general purpose CMOS operational amplifiers (op-amps) and conceived to operate with a magnetically actuated MEMS resonator fabricated on...
Precise measurement on the RF return loss was performed for a microfabricated slow-wave structure. The interaction circuit was designed to operate at 100 GHz of W-band frequency. A deep reactive ion etching (DRIE) showed a good side-wall profile but inaccurately curved bottom surface. The result represents that the etch rate was strongly dependent on the mask-opening area, which caused a frequency...
Equivalent circuit models have been developed to study the performance of the devices with two-dimensional electron gas (2DEG) system for terahertz (THz) applications (single- and grid-grating-gated high-electron-mobility transistor (HEMT)) and for sensing (micromachined HEMT with the array of resonant floating gates). The components of the equivalent circuits were related to physical and geometrical...
This study presents a newly developed dynamic model established by MATLAB Simulink that can handle post pull-in behavior of MEMS electrostatic torsional mirror. In addition to the conventional MATLAB Simulink model of the quadratic oscillation system, a mathematical model of displacement limiter has been inserted to represent the pull-in effect in dynamic analysis. Due to the modification, the model...
A CAD electromechanical model for phase noise simulation has been developed; it allows the simulation of the mechanical and RF behaviour for electrostatic MEMS devices taking Brownian noise into consideration. The model is implemented in commercial circuit software (ADS-based). The model is applied to study the effect of MEMS varactors in oscillator phase noise. The model describes the important nonlinear...
A variable gain differential transimpedance amplifier (TIA) optimized for MEMS-based oscillator applications is presented. The TIA achieves a variable gain of 17 kOmega to 290 kOmega, i.e. a gain range of 25 dB. The 3-dB bandwidths corresponding to these gains are 256 MHz and 103 MHz, respectively. The suitability of the TIA for the targeted application is demonstrated by combining it with a MEMS...
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