The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC...
We propose a MHz-switching-speed current-source gate driver for Silicon-Carbide (SiC) power MOSFETs. The proposed gate driver uses an inductor as a current source during switching transient. Compared with a conventional gate driver, the proposed gate driver reduces switching time ioff and ion by 20% and 32% respectively.
The commercial availability of silicon carbide (SiC) MOSFET has been a significant boost for power electronics industry. It is due to its unique improved switching capabilities compared to state of the art silicon (Si) IGBT. However, the faster switching response of SiC MOSFET gives rise to different technical issues in practical applications. This paper analyzes two of these issues. The first problem...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
The class of resonant converters is very attractive due to its ability to achieve nearly lossless switching by using zero current or zero voltage switching (ZCS/ZVS) for the switching devices in the input bridge. Since most switched-mode power supplies (SMPS) today use MOSFETs as semiconductor devices, a ZVS operation is typically preferred. However, the ongoing trend towards higher switching frequencies...
A 1200 V SiC MOSFET switches at much faster rate compared to a Si IGBT. As a consequence, SiC MOSFET experiences comparatively more ringing in device voltage and current due to the presence of parasitic inductance in the converter layout. Therefore, it is not straightforward to retrofit SiC MOSFETs in the converter layout of IGBTs where parasitic inductance appears in the range of 100 nH to 300 nH...
SiC MOSFET has low on-state resistance and can work on high switching frequency, high voltage and some other tough conditions with less temperature drift, which could provide the significant improvement of power density in power converters. However, for the bridge circuit in an actual converter, high dv/dt during fast switching transient of one MOSFET will amplify the negative influence of parasitic...
With the commercial introduction of wide bandgap power devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in the last few years, the high power and high frequency power electronics applications have gained more attention. The fast switching speed and high temperature features of SiC MOSFET break the limit of the traditional silicon MOSFET. However, the EMI problem under high dI/dt and...
Commercially available Silicon Carbide (SiC) MOSFET power modules often have a design based on existing packages previously used for silicon insulated-gate bipolar transistors. However, these packages are not optimized to take advantage of the SiC benefits, such as, high switching speeds and high-temperature operation. The package of a half-bridge SiC MOSFET module has been modeled and the parasitic...
This paper presents detailed characterization of a representative 10 kV SiC MOSFET module of the type recently developed for shipboard power applications; these modules have not been exhaustively described in the literature to-date. The characterization data presented includes forward curves, transfer curves, and capacitance-voltage (CV) curves, as well as estimates of packaging parasitic impedances...
This paper proposes a low cost gate driver of Silicon Carbide (SiC) MOSFET with a passive triggered auxiliary transistor in a phase-leg configuration. Silicon Carbide MOSFET can work on high blocking voltage and high switching frequency with less temperature drift. However, high switching speed may amplify the negative influence of parasitic components and produce significant voltage spikes during...
The switching transient properties of conventional power semiconductors (Silicon MOSFET and IGBT) have been proposed for online junction temperature (Tj) sensing. This method utilizes the semiconductor Tj dependent characteristics and the gate drive output dynamics. In this paper, the method is applied to wide bandgap power semiconductor, Silicon-Carbide (SiC) MOSFET. In order to demonstrate the SiC...
To achieve higher output PWM frequency with limited switching frequency of devices, a topology named parallel frequency-multiplication is employed in this paper, which, however, leads to more serious current spike and oscillation in the turn-on transient because of the parallel of devices. Aiming at this issue, the theoretical analysis of transient process is presented to explain how the current spike...
In this paper, the impact of using parallel SiC MOSFETs as the switching device is investigated. Measurement considerations for a double pulse test are discussed, and the influence of the load inductor characteristic and the voltage measurement technique on the measurement results is demonstrated. It is shown that the inductor load can produce high frequency oscillations of up to 10 % of the load...
A plausible Density Functional Theory (DFT)-based Oxygen Vacancy (OV) hole trap activation model was recently proposed to explain the High Temperature-Gate Bias (HTGB) stress-induced additional threshold voltage instability in 4H-Silicon Carbide (4H-SiC) power MOSFETs. In this model, certain originally electrically ‘inactive’ OVs were shown to structurally transform over time to form switching oxide...
This paper presents an optimized design example of high efficient inverter which consists of Silicon-Carbide (SiC) Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) and optimized gate driver for SiC-MOSFETs. The purpose of this research is to optimize design of SiC-MOSFETs inverters. We confirmed that the proposed inverter is capable of operating efficiently with experimental results. The...
Switching devices such as Silicon Carbide (SiC) MOSFET present significant performance improvement in high frequency switching power converter applications. This paper presents a gate charge profile investigation of a Silicon Carbide MOSFET and gate driver circuit solutions to optimize both switching speed, power losses and EMI requirements. Main technology issues of Silicon carbide MOSFET are presented...
This paper analyzes the influence of package parasitic inductance of fast switching MOSFET in the transient operation. It is found that in the traditional common source MOSFET packages, the inductor in the source connection pin limits the switching speed and reduces the system stability by the gate oscillation. Therefore a package using separated connection for gate control of fast switching MOSFET...
This paper mainly discusses the influence of stray inductance on the switching performance of SiC MOSFET. For package with three leads, stray inductance at the source electrode is shared by the driving path and power path, which can reduce the switching speed and lead to increased power loss. A double pulse test bench is designed to verify the analysis. Based on the test bench, a direct bond copper...
Gallium Nitride High Electron Mobility Transistor (GaN HEMT) is an emerging wide band gap power device in recent years. Using a cascoded structure, the GaN HEMT can be combined with a low voltage MOSFET to make the combination behave as a normally-off device. This paper investigates the soft-switching behavior of cascode GaN HEMT in the phase-leg structure. The analysis reveals some internal device...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.