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A novel approach for controlling series strings of voltage driven devices (e.g. JFET, MOSFET, IGBT) is presented that allows high voltage switches to be constructed from lower voltage devices. The approach allows controlled voltage sharing under steady-state and transient conditions and is achieved using a simple passive gate-side control circuit of resistors, capacitors, diodes and Zener diodes....
The transient effect of graded channel partially-depleted silicon-on-insulator nMOSFETs are analyzed by SILVACO ATLAS software. The switch on and switch off transient behaviors are studied for the device. While the device operates in the kink region, the transient effects of drain current were also investigated. It was found that the transient characteristic of the graded channel device was superior...
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