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In this paper, the graphene nanoelectronics progress in synthesizing wafer-scale monolayer-controlled graphene and fabricating high-speed graphene FETs (GFET) with the highest value reported cut-off frequency (f??) approaching 100 GHz was reported. Epitaxial growth was investigated to produce wafer-scale, high-quality graphene on SiC substrate. Low-energy electron diffraction microscopy, electron...
We have fabricated and characterized the field effect transistors having epitaxial-graphene channel grown on Si substrates. Epitaxial graphene is usually formed on SiC substrates by ultrahigh-vacuum (UHV) annealing. We used an approach to grow 3C-SiC(111) on Si substrates and subsequently to anneal it in UHV to make few layers of graphene on the sample surface. Backgate transistors using the SiC layer...
This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities...
We present first results on the application of PECVD silicon carbide as intermediate layer for crystalline silicon thin-film solar cells. Silicon carbide layers were deposited by PECVD and characterized by Auger spectrometry and SEM. The subsequent sample processing included high-temperature anneal, deposition of a silicon seeding layer by CVD, recrystallization of the seeding layer by zone-melting,...
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