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The superior properties of silicon carbide (SiC) power electronic devices compared with silicon (Si) are expected to have a significant impact on next-generation vehicles. When super high-speed switching devises such as SiC-VJFET are operated in a power converter, their high dv/dt rate in the rise time and the fall time causes a high-frequency common-mode current. It is necessary to evaluate the EMI...
We have demonstrated 1400V SiC power MOSFETs with a specific on-resistance of 5 mΩ-cm2. Discrete SiC MOSFETs (4.5 mm × 4.5 mm) have been demonstrated with a total on-resistance of 30 mΩ. SiC MOSFETs were packaged and characterized for switching losses. When switched at 600V and 15A, SiC MOSFETs with size of 2.25mm × 4.5 mm have a total switching energy of 0.26 mJ per pulse. These devices were characterized...
The motivation for our work is to identify a space for silicon carbide (SiC) devices in the silicon (Si) world. This paper presents a detailed experimental investigation of the switching behaviour of silicon and silicon carbide transistors (a JFET and a cascode device comprising a Si-MOSFET and a SiC-JFET). The experimental method is based on a clamped inductive load chopper circuit that puts considerable...
Twenty amp normally-off enhancement mode 4H-SiC VJFETs are demonstrated with 1.9 kV avalanche breakdown voltage and a specific on-resistance of 2.8 mOmega-cm2. The VJFETs shown near ideal subthreshold characteristics and maintain enhancement mode functionality to temperatures exceeding 175degC due to the optimized channel design with low DIBL characteristics. The low specific on-resistance enables...
In many pulse power applications there is a trend to modulators based on semiconductor technology. For these modulators high voltage and high current semiconductor switches are required in order to achieve a high pulsed power. Therefore, often high power IGBT modules or IGCT devices are used. Since these devices are based on bipolar technology the switching speed is limited and the switching losses...
In this paper the implementation and the performance of 1200 V / 30 A / 65 mOmega normally-off SiC-JFETs in photovoltaic inverters (PV-inverters) is shown and compared with Si-IGBTs. The JFETs' low switching energy and on-resistance lead to an improvement of efficiency and a reduction of costs and weight of PV-inverters.
Within the framework of photovoltaic systems connected to the grid, the potential of innovative semiconductor technologies with special focus on SiC devices will be analyzed. The properties of a SiC D-MOSFET will be experimentally examined firstly as a discrete element and then in a laboratory prototype of a highly efficient inverter circuit. The gain on efficiency and possible increase on the switching...
An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental...
The conventional wisdom that the SiC JFET is a normally on device has recently been superseded by the first practical normally off SiC JFET. The new true enhancement mode, three-terminal, pure-SiC design provides designers with a normally off solution that retains all the benefits of the normally on SiC JFET. With a simple change in the series gate impedance, the EM SiC JFET can be used with common...
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