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Temporary bonding and de-bonding techniques using respectively spin-on glass (SOG) and hydrogenated amorphous-Si (a-Si:H) have been examined for multichip-to-wafer three-dimensional (3D) integration process. In this study, a 280 um-thick known good dies of 5 mm × 5 mm in size were temporarily bonded to a pre-deposited (a-Si:H (100 nm) and SOG (400 nm)) support glass wafer. After completing the die...
Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.
We present a novel design of re-usable wafer carrier for safe manual or robotic handling of wafers from tens of μm in thickness. The carrier wafer stack then remains stable through a wide variety temperature, pressure and chemical environments. The carried wafer can then be easily debonded in a bespoke debonding tool with no residue or cleaning steps.
Low temperature wafer scale direct bonding technology using plasma activated bonding (PAB) for heterogeneous photonic device integration is reviewed. Nitrogen plasma irradiation in a high vacuum chamber allows tight strength bonding between InP-based and SOI wafers with the bonding temperature of 150°C as well as low damage to GaInAsP quantum wells (QWs). In contrast Argon irradiation cause poor bonding...
We have studied low temperature processes for monolithic 3D integration platform development including hydrogen/helium ion implantation-based wafer cleavage & bonding (< 450°C), low temperature (< 550°C) in-situ doped S/D selective SiGe epi process, low temperature (< 200°C) gate stack on the chemical-mechanical polished (CMP) wafer, and green-lased annealing. These unit technologies...
3D WLCSP using via last TSV (through silicon via) technology is an ideal packaging technology to meet small-form-factor, high I/O density, high-speed and most important, lower cost. For thin 3D WLCSP with TSVs, a number of critical processes need to be developed such as oxide etch, via cleaning and wafer de-bonding. In the present paper, processes for 8 inch, thin WLCSP with TSV diameter of 40µm and...
Ag sintering has been widely studied as a lead-free die attach solution for power electronics. A soak time of a dozen minutes at the sintering temperature is necessary to establish strong bond strength by the conventional heating method. Chemical bonding can be achieved by various parameters associated with the metallurgical bond of the adjacent surfaces. In this study, attaching technology between...
Wafer bonding is an attractive technology enabling manufacturing of complex wafer-level 3D architectures. The continuous demand for device size shrinking and performance improvement pushed for the development of new manufacturing technologies. This work reviews the main challenging raised for the wafer bonding processes and presents new developments in the aligned wafer bonding processes.
Preparation of lithium niobate thin-film on silicon is demonstrated. The process employed is composed of mechanical thinning of the lithium niobate and bonding by using laser irradiation to the face-to-face interface of the two materials. The process is performed in the ambient air while keeping the wafers at room temperature.
A new combined surface activated bonding (SAB) technique has been developed for hydrophilic wafer bonding in vacuum. Relative humidity in the bonding environment is not necessary in this novel hydrophilic bonding approach.
Cu/polymer hybrid surface was treated by Ar plasma and Ar fast atom bombardment to confirm the feasibility of Cu/polymer hybrid bonding by using surface activated bonding method. Uncross-linked novolac resin mixed with imidazole as the curing agent was used as the polymer adhesive. We used X-ray photoelectron spectroscopy to study the effects of Ar plasma and Ar FAB treatments on the Cu/polymer surface...
A new temporary bonding technology has been demonstrated, where both spin-on glass (SOG) and hydrogenated amorphous silicon (a-Si:H) were used as a bonding layer and as a debonding layer, respectively. Square chips were bonded to a glass wafer through the SOG layer and a-Si:H layer. The SOG bonding was capable of withstanding chip thinning and high-temperature chemical vapor deposition (CVD) processes...
The effect of bulk chemistry of deposited oxide materials on the eventual wafer bonding energy was fundamentally studied. Although low-temperature silicon oxide (LTO) and tetraethyl orthosilicate (TEOS) exhibited the same bulk density, and nitrogen plasma generated a higher degree of surface activation for TEOS than LTO, using LTO as the bonding oxide resulted in a much higher bonding energy than...
We demonstrate, for the first time, the use of off stoichiometry thiolene-epoxy, OSTE(+) for adhesive wafer bonding. The dual cure system, with an initial UV-curing step followed by a second thermal cure, allows for high bond strength and potentially high quality material interfaces. We show that cured OSTE(+) is easily removed in oxygen plasma and that the characteristics of OSTE(+) make it a potential...
Direct wafer bonding is a key technique to realize III–V/Si optical devices such as hybrid laser and optical amplifier on silicon platform. The conventional method of semiconductor wafer bonding has been developed mainly as fusion bonding technique that is based on adhesion phenomena between hydrophilic surfaces of oxides. However to achieve a permanent bonding, hydroxyl group at the interface must...
A GaInAsP/Si hybrid Fabry-Perot laser, fabricated by low temperature N2 plasma surface activated bonding on a Si substrate, was demonstrated. Lasing operation at room temperature was realized with a threshold current density of 0.85 kA/cm2.
We show that interconnection bonding of LSI chip to metallization on polyethylene naphthalate) (PEN) film can be realized by using cone-shaped compliant bump. We have investigated two designs of the counter electrode. One is simple metal pad electrode and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found...
Advanced methods for low temperature bonding are reviewed and discussed in terms of the concept of the surface activation and the future outlook of their development in 3D integration. As one of the methods, a new attempt for room temperature bonding is introduced, which enables to bond inorganic materials such as Si oxides, glasses and sapphire as well as single crystalline piezoelectric materials...
A nanoprecision aligned wafer bonding is presented enabling creating innovative nanostructures. To achieve high-precision wafer bonding, a perfect alignment as well as room-temperature bonding process is necessary. In this paper, the limit of typical alignment methods is addressed firstly and a moire fringe assisted alignment method is developed to breakthrough the limit. Moreover, in order to realize...
For chip-size packaging of optical microsystems, surface activated bonding (SAB) method is one attractive candidate because of its low-temperature process. However, most of packaging processes with SAB method have been performed under ultra-high vacuum conditions, because it needs maintaining the activated surface during bonding process. In this study, we demonstrate low-temperature hermetic sealing...
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