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Bonding dynamics during ultrasonic bonding of Cu free air ball (FAB) is investigated by measuring dynamic strain with piezoresistive strain sensor. Change in dynamic strain with elevating substrate temperature up to 200°C was investigated. It was clearly observed that elevating substrate temperature significantly enhanced deformation of the Cu FAB while the application of pressing load and ultrasonic...
This paper presents two types of coplanar transitions based on aluminum nitride (AlN) substrate for interposer designs of terabit transceivers. The designs of coupled coplanar waveguide (CCPW), coupled line, coplanar waveguide (CPW), and coplanar stripline (CPS) based on AlN substrate are explained. The effects of absorber layer and wire bonding bridges are described. Two types of coplanar transitions...
The market of Connectivity, Internet of Things (IoT), Wearable and Smart industrial applications leads Fan Out Wafer Level Package (FOWLP) technologies to a promising solution to overcome the limitation of conventional wafer level package, flip chip package and wire bonding package in terms of the solution of low cost, high performance and smaller form factor packaging. Moreover, FOWLP technology...
As an inevitable step during ultrasonic bonding of aluminum or copper materials, the removal of oxides that prevent the bond formation is essential for obtaining high quality. Nevertheless, the oxides removal process is still unclear after tens of years' application of ultrasonic bonding. In this project, the removal mechanism was investigated via the analysis of an artificially coated oxide layer...
The bonding feasibility of Insulated Au-Flash PdCu (X-PdFlash) has proven to be successful in many of the previous studies shown in various papers. This has given the confidence of this collaborative project to explore into other areas of bonding applications with potential challenges on insulated Au-Flash PdCu wire. One critical potential area of study would be in Ultra-Low-Loop(ULL) application...
Wire bonding is one of the most important processes which connected the die and lead frame in LED packaging. Compared with other interconnect technology, wire bonding is much easier to be accomplished. Nevertheless, the gradual increased price of gold makes the cost of bonding increased. As a substitute material of gold, copper comes into sight. Its electrical conductivity is 30% higher than gold...
The well-controlled droplets jetting forming permits high efficiency in bonding wire manufacture. In order to achieve better control of the droplets jetting forming, numerous parameters in the jetting process should be studied. This article study the effect of substrate temperature on the solidification of tin bonding wire. Experiments on the solidification of tin bonding wire under different substrate...
SiP is becoming a popular technology as it can provide an effective method for system integration and miniaturization. The complex structure and diversity of technologies applied in SiP may cause unexpected failure. Failure analysis of SiP is getting more difficult than that of single die packaging. In this paper, failure analysis of a SiP which integrated four functional dies and one silicon interposer...
Novel analytical model for bonding wire has been proposed in this paper. Bonding wires on stacked dies with different connection paths have been modeled and simulated at high frequency. Return loss demonstrated that the transfer connection path showed better transmission performance. Furthermore, the relationship between materials with different dielectric constant and return loss were investigated...
In recent years, Ag alloy wire has attracted great interest as a novel bonding material to replace the conventional Au wire bonding. Ag wire has the advantages of great workability, high electrical conductivity and low growth rate of intermetallic compound at bonding interface. However, in literatures, studies on mechanisms of the growth of Ag-Al intermetallic compounds and their impact on bonding...
Recently, there have been many developments on power devices to improve their functions. Especially, the junction temperature of power modules that equip SiC (Silicon Carbide) chips will be higher than 200 °C as current densities are too high, and new electronic packaging technologies shall be developed to meet higher temperature and higher power cycle durability requirements. In order to meet these...
Because of the need for electronics use at temperatures beyond 150°C, new high temperature interconnection technologies emerge, like silver sintering and copper wire bonding. In the project PROPOWER inverter modules with IGBTs and diodes mounted on DBC substrates were investigated as a prototype. Analyses were made to study the effects of the new interconnect technologies on fatigue failure. It is...
Additive manufacturing can be a truly transformative force for manufacturing flexibility by cutting prototyping and developing time, enabling complex shapes and structures, and reducing material waste. The growing demand for 3D electronic devices and customized electronic components as well as for a high level of integration can be met by 3D Aerosol Jet printing. This versatile maskless printing-method...
To increase quality and reliability of copper wire bonds, self-optimization is a promising technique. For the implementation of self-optimization for ultrasonic heavy copper wire bonding machines, a model of stick-slip motion between tool and wire and between wire and substrate during the bonding process is essential. Investigations confirm that both of these contacts do indeed show stick-slip movement...
The aluminum (Al) wire interconnect cannot fulfill the increased demand in power electronics. The Copper (Cu) wire interconnect is being introduced in high power, high temperature applications. The Cu wire is much harder material and wears the bond tool much faster than the Al wire. Improving the bond tool life and maintaining the process stability are challenges that must be met before the Cu wire...
This paper presents a three-dimensional (3D) hybrid integration methodology for terabit transceivers. The simulation methodology for multi-conductor structures are explained. The effect of ground vias on the RF circuitry and the preferred interposer substrate material for large bandwidth 3D hybrid integration are described. An equivalent circuit model of the via-throughs connecting the RF circuitry...
ViB, Via-interconnect Ball-Grid-Array, is a new package species which is denominated first in the industry in this paper. This new species involves a new chip-to-package interconnect technology named via-interconnect. Some of WLPs (Wafer Level Packages) and recently developed so-called “fan-out” packages belong to this category. The definition of ViB is a ball-grid-array package whose chip-to-package...
We are developing an active implant for epidural spinal cord stimulation. A thin application specific integrated circuit (ASIC) (∼80 μm) is to be embedded within it. The laser patterned tracks are electrically and mechanically thermosonically bonded on the ASIC pads using gold ball studs, forming micro-rivets through holes in the foil of the tracks, an interconnection method called electrical rivet...
Substrates for high power electronic systems are dominated by DCB-technology. Recently, new copper thick-film pastes have been proposed for use as high power substrates. They are compatible with Al2O3- and pre-oxised AlN-substrates. This paper investigates production processes to build up highly reliable power modules and explores basis electrical and thermal properties of thick-film copper substrates...
0.1 μm soft gold film substrate was ultrasonic bonded with 0.6 mil gold wire, which effectively reduced gold assumption comparing to the traditional 0.3∼0.5 μm soft gold film substrate. The substrate showed good bondability by wire pull test (WPT) and perfect reliability by high temperature storage test (HTST). The bonding structure in failure mode of wire pull test was studied by focused ion beam...
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