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Glass (7740) and silicon (100) wafer are bonded using gold as the bonding medium and annealed to enhance the bonding strength at temperature about 450°C. The voids in the bonding interface are the main reason to cause the poor reliability of bonding, and scanning electron microscope (SEM) photos reveal that there are a number of voids in the craters on the surface of silicon wafer after bonding. It...
Glass (7740) and silicon (100) wafer are bonded using gold as the bonding medium and annealed to enhance the bonding strength at temperature about 450°C. The voids in the bonding interface are the main reason to cause the poor reliability of bonding, and scanning electron microscope (SEM) photos reveal that there are a number of voids in the craters on the surface of silicon wafer after bonding. It...
Today's semiconductor industry continues to deliver high performance and cost effective solution. Copper wire bonding is one of the hot topics on low cost alternative packaging materials. However, copper wire bonding is still not fully established and it requires significant engineering effort especially on the C65 low k, wafer with probed Al bond pads. A thin gold wire compared to copper wire will...
Gold and copper ball bonds were isothermally aged under moist conditions (85°C and 85% relative humidity (RH)) and wet conditions (85°C in DI water with and without NaCl) in an effort to better understand the corrosion mechanisms that operate under moist and wet conditions. The objective of this work is to undertake and report on the initial stages of a research project that aims to compare the performance...
The purpose of this work is the analysis of reliable wire bonding schemes for power SiC diodes working at high temperature. The surge current and the power cycling behavior of different wire bonding technologies are analyzed. A dedicated test bench was developed for the surge current and the power cycling reliability tests. It allows an accelerated reliability test, 105 cycles takes just 3 hours....
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