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Advanced CMOS technology assures CMOS device as a good choice for physical realization of RF applications. But as scaling progresses, noise and short channel effect start to deteriorate the device performance, thus increasing the power dissipation. This work focuses on the analysis of thermal noise by varying the gate resistance and frequency. Equivalent noise voltage is calculated for various extracted...
The gate and bulk resistances influence on the impedance matching in case of MOSFET common gate amplifiers is investigated. It is shown that using a supplementary resistance of maximum 100Ω, S11 becomes less than −15 dB over a wide frequency range, therefore making the circuit suitable for low power wideband RF applications and less sensitive to the loading capacitor value, at the price of a supplementary...
We have developed a small capacitance RF-MOSFET with small-resistance long-finger gate electrode, which is featured by Direct Finger Contact (DFC) on the gate electrode in active region to reduce its resistance. The unique structure and layout, which is different from a conventional multiplied-short-finger MOSFET, suppress the parasitic capacitance around the gate electrode to obtain high fT. This...
In this paper, we present a cost-effective JFET integrated in 0.18μm RFCMOS process. The design is highly compatible with standard CMOS process, therefore can be easily scaled and implemented in advanced technology nodes. The design impact on Ron and Voff is further discussed, providing the insights and guidelines for JFET optimization. Besides the superior flicker noise (1/f noise) characteristics,...
High-Frequency signal and noise measurements on 40 nm, 80 nm, and 110 nm, gate-length MOS transistors are performed. On-wafer measurements of S-parameters up to 18 GHz yield an accurate small-signal RF device model with gm in excess of 1000 mS/mm. Noise contributions due to gate resistance, substrate resistance, source and drain resistances, substrate current and induced-gate noise are found to be...
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