The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Based on the semiconductor heterojunction theory and three-layer model of Si-SiO2, the expressions of electroluminescence intensity ratio of interface layer to silicon core were deduced. The result can explain the low electroluminescence efficiency and the phenomenon of multi electroluminescence peak of nano-porous oxidized silicon well. Simulation results show that: 1) ΔE has a great influence on...
The design of highly reflective subwavelength gratings (SWGs) for use in a micro-electromechanical system (MEMS) tunable spectrometer is presented. The SWGs are designed to be polarization independent at an incident wavelength of 1.5 ??m with high reflectivity over a 200 nm bandwidth. Two designs are considered; Model 1: a silicon layer with periodic air holes and Model 2: a stacked Si-SiO2-Si design...
In this work we calculate the electron band structure of a silicon periodic nanostructure embedded into SiO2 and describe the computational implementation we used for this purpose. Further, we discuss the influence of nonparabolicity of electron silicon band structure in the dispersion relation of the periodic nanostructure.
A spectral response of silica and hybrid silica/silicon disc microresonators is investigated and their different nonlinear behavior is discussed in terms of different sources of nonlinearity.
An optical filter based on a side-coupled two-dimensional photonic crystal surface mode cavity on crystalline silicon-on-insulator (SOI) structure is presented. The measured system Q and intrinsic Q factor are 6900 and 13700, respectively.
We report a wavelength conversion efficiency of -5.5 dB via four-wave-mixing in a low-loss 2.5 cm long sub-micron silicon-on-insulator rib waveguide. The impact of non-linear absorption and waveguide dimensions on the conversion efficiency is studied.
In this paper we propose an all optical switch in silicon on insulator (SOI) waveguides based on two nonlinear phenomena, stimulated Raman scattering (SRS), and free carrier absorption (FCA). About 13 dB extinction ratio is achieved.
Silicon-on-insulator technology utilizing very high resistivity handle wafers demonstrates sufficient performance for many cellular handset requirements. Technologies with either thin or thick device layers show promise. Thick-SOI prototype single pole six throw switch (SP6T) P-0.1dB of about 40 dBm and -75 dBc harmonic at 35 dBm output have been demonstrated at 900 MHz. Thin-SOI Ron-Coff product...
Application of asymmetric sidewall vertical metal oxide semiconductor field effect transistors (MOSFETs) is hindered by the parasitic overlap capacitance associated with their layout, which is considerably larger than for a lateral MOSFET on the same technology node. A simple process simulation has been developed to reduce the parasitic overlap capacitance in the asymmetric sidewalls vertical MOSFETs...
Non-linear behaviour of RF coplanar transmission lines is analyzed for various values of Si substrate resistivitiy. Based on small-signal measurements performed under different DC bias conditions, voltage dependent capacitance and conductance per unit length of the transmission line are extracted and compared for several silicon substrates. Harmonic distortion of large RF signal at 900 MHz along CPW...
We will review the latest results on development of submicron silicon-on-insulator waveguiding structures - photonic crystals and single-mode strip waveguides (photonic wires)
This presentation will give an overview of research being done at Intel in the area of silicon photonics. Recent breakthroughs in high speed optical modulation and Raman amplification in SOI waveguides will be discussed
An absolute micro-encoder based on the code imaging is developed. The ball lens (phi300 mum) is assembled inside the cavity between the pyrex glass lid and suspensions in the handling Si layer of the SOI wafer. The photodiode array is prepared in the device Si layer. The image of the scale is incident on the backside of the photodiodes. The electrical wiring to photodiodes does not disturb the optics...
The use of a simple, rapid (one minute) and nondestructive technique for inline monitoring of electrically active impurities introduced during wafer fabrication is reported. The technique is shown to have a resolution on the order of 1×1010/cm2 , better than that of most spectroscopic techniques such as SIMS, XRF, and AES which are time consuming and destructive. It is based on the use of...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.