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This paper proposes a novel method to derive the junction temperature of a Silicon Carbide Schottky Barrier Diode (SiC SBD) when it is in operation. There is a correlation between the switching waveforms and the temperature, due to the material parameters and the carrier vary with the temperature. Estimating the Turn-on-delay time as a temperature sensitive electrical parameter (TSEP), the chip temperature...
With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
In this paper are described some principles and new methods underlying the temperature adjustment in an laboratory electrical furnace. Due to high thermal inertia, classical Proportional-Integral-Derivative algorithms are difficult to be implemented when a high precision temperature adjustment is required. An original software algorithm written in C language performs the temperature control function,...
A highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed. The control principles of delta and average junction temperatures are introduced. By using isolated thermal fibers, the junction temperature (Tj) variations can be monitored during the test process without removal of silicone gel. The power module is tested in the conditions of...
The reverse recovery characteristics of the body diodes of planar and double-trench SiC MOSFETs are experimentally analyzed in switching tests and compared. The body diode of the trench SiC MOSFET shows improved performance, so that using an anti-parallel SBD to suppress the reverse recovery behavior becomes unnecessary. Following the switching tests, the devices are operated in continuous mode in...
Silicon carbide (SiC) power MOSFETs have been becoming a strong alternative to silicon (Si) technology in high-voltage, high-frequency, and high-temperature applications. Despite their growing market share, limited field information is available regarding the aging facts under thermal stress and long term reliability of discrete SiC MOSFETs. In this paper, discrete SiC devices are thermally aged through...
An analysis of variation of drain current (dID/dt) of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) in turn-on and turn-off under different temperatures has been performed in this paper. It is shown that the magnitude of turn-off dID/dt is temperature dependent and decreases with tempertature with a fixed supply voltage, load current and gate resistance. While,...
Silicon Carbide (SiC) power devices with super-cascode structure provide a cost-effective solution for high performance medium voltage power switches. However, these SiC super-cascode devices are still in the early development stage, and limited information on the device characteristics is available. This paper presents the characterization and evaluation of a 4.5 kV, 40 A SiC super-cascode device...
Following the recent advances in the production of 3.3 kV and 10 kV SiC power MOSFETs, Wolfspeed launched an effort to develop a new generation 6.5 kV SiC power MOSFET to fill the medium-to high-voltage fast switching device void in applications such as rail traction and mediumvoltage motor drives. The characteristics of the new generation 6.5 kV SiC power MOSFET rated at a drain current of 30 A,...
In this paper, the degradation at the gate oxide layer of a SiC MOSFET has been studied. The online condition monitoring was achieved by Spread Spectrum Time Domain Reflectometry (SSTDR) for the first time in SiC based devices. An accelerated aging station was built to age the power semiconductor devices in a standardized way, and power cycling test was performed to induce degradation. Finally, the...
This paper investigates the high-temperature thermal response of a Ni/SiC-Schottky diode with a severe degree of contact in homogeneity. Forward characteristics, visibly affected by non-uniform Schottky barrier height in the 25°C-450°C domain are very accurately reproduced using a model based on parallel conduction. Constant sensitivity is established for the analyzed sample in the entire measurement...
This paper presents the project procedure to develop a Half-Bridge (HB) Non-Isolated DC-DC converter applying a Normally-On GaN-based switch. Normally-on devices (D-mode) present the benefit of lower costs in terms of production if compared with E-mode devices, which gives an economic motivation to study and develop power electronics converters applying this technology. The devices under test (DUTs)...
Nickel-based super alloys have been the mainstay for gas turbine components comprising the hot section. However, due to their superior thermomechanical properties, SiC-SiC ceramic matrix composites (CMC) are replacing nickel-based superalloy components. This requires that the CMC components be instrumented to determine structural integrity. Traditional wire thermocouples report reliable data but are...
Silicon Carbide (SiC) bipolar integrated circuits are a promising technology for extreme environment applications. SiC bipolar technology shows stable operation over a wide range of temperature. However, the current gain of the devices is suffering from high surface recombination, due to poor oxide passivation. In this paper we propose a gated base structure that offers improved current gain control...
In standard power cycling tests, forward conduction generates heat in the die and therefore the ther-momechanical stress in the package. In application, however, a significant part of the power losses are switching losses, so that the load current is lower than in standard power cycling test, for an equal temperature swing. A new concept for power cycling tests is presented, which allows the generation...
In this study, it is found that the temperature measurement using body diode of SiC-MOSFET is greatly affected by the bias voltage between gate and source, unlike using body diode of Si-MOSFET. We introduce a method that it is possible to measure the junction temperature correctly by applying a suitable negative bias between G-S. Hence, the heat resistance evaluation method for the SiC power module...
Isolated DC-DC conversion with high power density is widely achieved by DC to high-frequency AC conversion, followed by isolation and high frequency rectification. Selection of high-performance diodes for such high-frequency rectification is challenging as a trade-off is often required among numerous conflicting parameters. Three high performance diodes, namely, an ultra-fast silicon diode, a super...
Compared with the silicon semiconductors, silicon carbide (SiC) metal-oxide-semiconductor Field-Efïect transistor (MOSFET) can operate at higher switching frequency and higher temperature, which makes the junction temperature estimation more significant and challenging. In this paper, different thermo- sensitive electrical parameters (TSEPs) are investigated about their potential to measure the junction...
In this work, the high temperature (up to 375°C) dynamic characteristics of 1.2kV SiC VDMOS, including the gate charge, the switching and the body diode reverse recovery characteristics, are measured and analyzed in detail. The experiments show that, with the increase of temperature, the Miller plateau declines, the reverse recovery charge rises, the turn-on time decreases and the turn-off time increases...
As we known, the measurement of junction-to-case thermal resistance (Rth-JC) of semiconductor power devices is very important. In this paper, an approach of transient dual interface method (TDIM) with gate-source voltage (Vgs) as the temperature sensitive electrical parameters (TSEP) was investigated for the measurement of Rth-JC of packaged SiC MOSFET. The measured Rth-JC value of packaged SiC MOSFET...
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