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This work presents a CMOS compatible method to develop suspended inductors. In other words, if analytical models for designing planar inductors do not take into account unwanted effects (due to the silicon substrate), our proposal is to etch the substrate in order to match both numerical results and experimental data. The accuracy in the inductance value is required not only to develop a design model,...
The Ge/Ge0.94Sn0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.
Hydrogenated microcrystalline silicon (μc-Si:H) thin films have been grown on glass substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) at a low temperature of 180 °C. We investigate the influence of hydrogen dilution ratio (H2/SiH4) and working pressure on structural properties as deposition rate, crystallinity, and hydrogen content of the μc-Si:H. It is found that with...
Graphene/hexagonal boron nitride (h-BN) was characterized. Field emission from graphene/h-BN/Si structure showed low threshold voltage and enhanced emission current. Fowler-Nordheim (F-N) plots were applied to discuss the obtained field emission properties. We also examined work function using ultraviolet photoelectron spectroscopy (UPS). The obtained data suggested that graphene modified work function...
We reported an approach to grow carbon nanotube (CNT) arrays on graphene to obtain stable high emission current density along with scalable total ultrahigh emission current of more than 200 mA. Microwave plasma CVD was employed to grown multi-layered graphene directly on silicon wafer followed by synthesis of vertically well-aligned patterned CNT arrays, the excellent thermal conductivity and electric...
There are some challenges in Electromagnetic Nondestructive Testing (EM NDT) techniques. Micro cracks are too small to find and evaluate at the beginning. Complex components are hardly to inspect. The volumetric sensor is difficult to be embedded in the structures. To solve these problems, Micro-Electro-Mechanical Systems (MEMS) was presented to fabricate micro inductive coils as eddy current sensor...
Here we present the prolongation of our earlier studies [2] about of NPs formation in Si substrate by subsequently 64Zn+ and 16O+ ion implantation and thermal treatment. The Si substrates were implanted with dose of D=2×1016 cm−2 by 64Zn+ ions with energy of E=100 keV and 16O+ ions with energy of E=30 keV. The characterization of implanted layer and visualization of NPs formation were made by high...
We have performed non-equilibrium Green's function simulation of n-type ultra-small V-groove junctionless field-effect transistors (JL-FETs) on a silicon-on-insulator substrate under the ballistic condition. We find that the ON-current is determined mainly by the gap thickness and the subthreshold swing becomes the minimum at a gap-thickness of about 0.6 nm for the gate-length of 7.2 nm.
A vertical power MOSFET with the extended trench oxide is proposed. The key feature of this device structure is that the trench oxide, which is set in the side of the device, is extended to n+ substrate. This technique decreases the corner effect of oxide and improves the tradeoff between breakdown voltage (BV) and the specific on-resistance (Ron, sp). Silvaco T-CAD tool is used for the simulation...
We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.
We report on simulation results that shows optimum photon absorption by superconducting nanowires can happen at a fill-factor that is much less than 100%. We also present experimental results on high performance of our superconducting nanowire single photon detectors realized using NbTiN on oxidized silicon.
Monolithic integration of photonic devices with electronics has attracted interest and there has been growing interest in photonic devices based on Si-compatible materials. Ge has a bandgap of 0.67 eV at room temperature and high absorption coefficient in the range of 1.3 – 1.55 µm. Furthermore, when biaxial tensile stress is applied to Ge, it transforms from an indirect to a direct bandgap material...
The Effect of silicon window polarity on partial-SOI (partial silicon-on-insulator, PSOI) LDMOS power devices under high-voltage operation is studied. Different polarities of the silicon window in PSOI LDMOSFETs are analyzed to investigate their effects on electrical characteristics: breakdown voltage (BV) and on-resistance (Ron). In partial-SOI LDMOSFETs, the P-type silicon window is considered as...
The paper presents results of structure analysis of silicon oxide films prepared by plasma enhanced chemical vapor deposition (PECVD) methods with a high power plasma excitation. The films were deposited from hexamethyldisilazane and oxygen mixture. Dependences on deposition parameters are presented.
The high efficiency vertical light emitting diodes (V-LEDs) using mechanical lift-off with Micro-Porous GaN template formed by high temperature molten KOH wet etching process were demonstrated. The average threading dislocation density (TDD) of u-GaN after regrowth was estimated by transmission electron microscopy (TEM) reduced from 2×109 to 1×108 cm−2. The sapphire substrate was easily removed by...
We show enhanced transfer of excitons from the energy-gradient of bilayered green/red-emitting quantum dots into silicon using cascaded nonradiative energy with an overall enhancement factor of 1.3 at room temperature for solar cell sensitization.
Single crystal Ge layers of different thickness were successfully formed on bulk SiO2 by ion implantation and oxidation techniques. Structural and compositional properties of the Ge layers were investigated by high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy. The quality of the resulting layers was found to be a function of the layer thickness.
During the molecular beam epitaxy of Ge film on the Si substrate the heterostructure's temperature increases comparing to the initials substrate's temperature when the thickness of the film increases. Since the film growth in the conditions of no controlled temperature increase leads to decrease of the film structure quality the temperature of the substrate should be corrected over the time. When...
Miniaturised ultrasound transducer arrays with integrated electronics will in future enable significant advances in high resolution medical imaging and in acoustic tweezing for bioscience research. However, their development has been limited by challenges in scaling down conventional piezoelectric ultrasound transducer fabrication and interconnection techniques. Piezoelectric thin film transducers...
Ca films were deposited directly on Si(100) substrates by Radio Frequency (R.F.) magnetron sputtering system (MS) and subsequent were pre-annealed at 600 °C for 2h in situ. Finally, the samples were annealed again at 750°C, 782°C, 795°C, 800°C and 850°C for 1h in a vacuum furnace by an interdiffusion process between the deposited particles and clusters and Si atoms, respectively. The structural and...
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