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In this study, the comparison of methods of improving electro-physical properties of silicon dioxide (SiO2) by means of silicon substrates fluorination in CF4 in PECVD and RIE reactors, prior to oxide deposition, has been performed. The results proved that, in general, fluorination in RIE is superior to the fluorination in PECVD reactor. The observed effects have been referred to the obtained changes...
Si\SiO2 double-barrier structures with ultrathin nanoscale layers were developed by using α-Si:H thin film depositions and subsequently plasma enhanced oxidation. The experimental equipment with source of wide aperture and high-density inductively coupled RF plasma (ICP) was used. The electrical properties of the manufactured MOS-structures were investigated through measurement of C-V and I-V characteristics...
In this work phosphorus or boron ions were implanted into dielectric layer by ion implantation. The impurity energy levels are introduced into the band gap of dielectric layer, thus the scattering processes of trapped charges in the dielectric layer can be changed, which lead to the change of relaxation time. In our experiment, we focus on investigation of the mechanisms of the charge accumulation...
In this work, electrical characteristics of two types MOS memory structures: one that contains platinum and one that contains gold nanoparticles, embedded between two dielectric layers, a thin "tunneling" SiO2 and a thicker HfO2 "control" layer has been compared. The nanoparticles are formed during simple electron-gun deposition of a very small quantity of platinum or gold, at...
SiO2 films prepared by atmospheric pressure chemical vapor deposition (APCVD) were investigated for surface passivation of crystalline Si solar cells. The passivation effects of APCVD SiO2 for p-type Si substrates were evaluated by measuring excess minority carrier lifetimes. Effective surface recombination velocities S eff were decreased by successive annealing in N2 atmosphere at 300-700 degC without...
The paper deals with the extensive characterisation of a 20-nm oxide using multiple wafer fabrication lots. The data generated indicate that the intrinsic wearout properties of the oxide are best modelled by the E model with a field-dependent activation energy and a constant field acceleration factor. Of the 3 lots used in the characterisation one exhibited bimodal characteristics with a large extrinsic...
A novel oxide stressing procedure is used to determine the relation between oxide degradation and oxide breakdown. Results suggest that the mechanism of oxide breakdown depends on the oxide thickness. In 5 and 7 nm oxides, electron trap generation correlates with oxide breakdown. In 10 nm oxide, positive charge trapping correlates with oxide breakdown.
It has been shown that trap generation inside thin oxides during high voltage stressing can be coupled to time-dependent-dielectric-breakdown distributions through the statistics linking wearout to breakdown. Since the traps play a crucial role in the wearout/breakdown process, it is important to understand the properties of these traps. Oxides with thicknesses between 2.5 nm and 22 nm have been studied...
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