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Nowadays the field-stop (FS) IGBT provides lower saturation voltage drop and lower switching losses than the conventional non-punch-through (NPT) IGBT, making the FS IGBT well suited for induction heating (IH) applications. A relatively recent improvement in the FS IGBT — the integration of an antiparallel diode on the IGBT die through use of the shorted-anode (SA) technology — made the FS IGBT even...
This paper is related to the top structure design optimization in the case of a 1.2KV Field-Stop (FS) Emitter-implant (EI) Trench-gate IGBT. In particular we focused our attention on the electrical behavior of the device and, above all, on some specific electrical characteristics in order to address all the applications where the short-circuit withstanding time is a key parameter. The results of the...
In this paper we present a comparative study between the characteristics of the MOS-Gated GTO, a new power semiconductor device, and the IGBT having the same n-n+p+vertical structure. The blocking voltage of the analyzed devices ranges between 1.2 kV and 4.5 kV. Simulation results show that the MOS-GTO exhibits a much better trade-off between on state and switching characteristics than the IGBT particularly...
High voltage semiconductor devices continue to play a major role in modern megawatt power systems especially in the fields of traction, transmission and distribution (T&D) and industrial applications. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness,...
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