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We have fabricated ultra-short cavity membrane distributed Bragg reflector lasers on SiO2/Si substrate for constructing chip-to-chip optical links. To reduce the power consumption of transmitters, reducing cavity length is important. Since the membrane structure enables us to achieve a large optical confinement factor and a surface grating with a large coupling coefficient, we have successfully reduced...
The fabrication and realization of single mode GaN-based nanowire lasers is presented, using a number of techniques, including geometry control, coupled nanowire pairs, placement onto a gold substrate, and distributed feedback.
Toward realization of an ultralow-power-consumption semiconductor light source for on-chip optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane DFB laser with 158 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 390 μA for the cavity...
We have demonstrated single-mode lasing in a single gallium nitride nanowire using distributed feedback by external coupling to a dielectric grating. By adjusting the nanowire grating alignment we achieved a mode suppression ratio of 17dB.
Toward realization of an ultralow-power-consumption semiconductor light source for optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane Fabry-Perot (FP) laser with 220 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 3.5 mA for...
Uniformly distributed quantum-well structure was introduced to a lateral-current-injection (LCI) laser to realize high internal quantum efficiency operation. As the result, superior light output characteristic was obtained with the internal quantum efficiencies of 70%.
Lateral current injection DFB laser with a-Si surface grating was demonstrated, as step to realize membrane laser. The threshold current of 7.0 mA and the differential quantum efficiency of 43% from the front facet were obtained.
Injection type DFB lasers directly bonded on an SOI substrate were realized for the first time. A threshold current as low as 104 mA was obtained with a stripe width of 25 mum and a cavity length of 1 mm.
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