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III-nitride based nanostructures have gained interest as nanoscale light sources in the UV to visible wavelengths. Here we present a top-down approach to enable vertical, high aspect ratio III-nitride-based nanowires with controllable height, pitch, and diameter. Additionally, through the use of orientation-dependent etch rate measurements, the cross-sections of such nanostructures can be predicted...
Nanowires have gained interest as coherent, nanoscale light sources. Using a top-down approach, high quality III-nitride-based nanowires with controllable height, pitch and diameter have been realized. Here, the fabrication, and lasing characteristics of GaN-based and GaN/InGaN based nanowires fabricated by this approach will be presented, along with schemes for single optical mode selection, polarization...
Lasing is demonstrated from nonpolar III-nitride core-shell multi-quantum-well nanowires. The nanowire lasers were fabricated by coupling a top-down and bottom-up methodology and achieved lasing at wavelengths below the GaN bandedge.
We demonstrate the growth of ordered arrays of nonpolar $$\{ 10\bar{1}0\} $$ { 10 1 ¯ 0 } core–shell nanowalls and semipolar $$ \{ 10\bar{1}1\}$$ { 10 1 ¯ 1 } core–shell pyramidal nanostripes on c -plane (0001) sapphire substrates using selective-area epitaxy and metal organic chemical vapor deposition. The nanostructure arrays are controllably...
The fabrication and realization of single mode GaN-based nanowire lasers is presented, using a number of techniques, including geometry control, coupled nanowire pairs, placement onto a gold substrate, and distributed feedback.
We have demonstrated single-mode lasing in a single gallium nitride nanowire using distributed feedback by external coupling to a dielectric grating. By adjusting the nanowire grating alignment we achieved a mode suppression ratio of 17dB.
InGaN quantum dots at high densities (∼1011 dots/cm2) are demonstrated using metalorganic chemical vapor deposition combined with post growth processing of InGaN materials. Optical and structural studies are performed to characterize InGaN quantum dots.
Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes.
We have demonstrated a multi-color array of photonic crystal lasers on a single chip. By lithographically defining the geometrical properties of the photonic crystals we have achieved tuning from 376–435 nm using a single epitaxial growth.
We directly demonstrate a dielectric optical magnetic mirror using phase-locked mid-infrared time-domain spectroscopy. This magnetic mirror is formed by micron-sized cubes of tellurium fabricated on a dielectric substrate.
We use phase-locked time-domain spectroscopy in the mid-infrared to directly demonstrate the “infrared magnetic mirror” behavior of an all-dielectric metamaterial. This metamaterial surface consists of micron-sized cubes of tellurium fabricated on a dielectric substrate.
We experimentally demonstrate silicon ring resonators with internal quality factors of Q0=2.2×107, corresponding to record 2.7-dB/m losses. We show that the losses are bend-loss-limited, indicating that the loss limit for silicon has not been reached.
We obtained single-mode lasing in GaN nanowires by using a limited number of cavity modes and a narrow gain spectra. The fabrication was achieved by a top-down technique in high quality GaN films.
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