The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper presents compact model for carbon nanotube field effect transistor (CNTFET) which is derived from electronic structure of carbon nanotube (CNT). Complete current transport model is developed from carrier concentration in CNT for different chirality. The model describes the variation of charge developed on CNT with gate voltage. I-V characteristics have been efficiently modeled and compact...
Hydropower is emerging as a major contributor to the world energy requirement. It's inexhaustible, clean and has many other benefits as it doesn't encounter the problems of population displacement and environmental problems. However, it requires control systems to keep the frequency values constant. In this paper we develop a model of three-phase micro hydropower Plant (MHPP) using Takagi-Sugeno (TS)...
Power vs efficiency analysis of High-Frequency Wireless Power Transfer Systems (WPTSs) is discussed in this paper. The adopted model includes the effects of modulation of the duty-cycle and phase-shift of the secondary side controlled rectifier, as well as parameters mismatches of resonant elements, which influence the power losses of both rectifier and inverter semiconductor devices. The global influence...
Today quantum computer modeling thematic attracts many scientists as it is difficult to examine theoretically synthesized quantum algorithms. The main problem is whether a newly created algorithm would have an efficient implementation on the quantum computer or not. Mathematical core of quantum computations is quite discovered and allows quantum computer workflow simulation using classical computers...
In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed. A novel feature of this loss model is that it considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss. The proposed model identifies the switching waveform subintervals, and develops the analytical equations in each switching...
In this paper, an efficient extraction technique is proposed for determining all extrinsic and intrinsic element values of SOI-UTBB transistors. Starting from measured S-parameters and using simple Z- and Y-matrix transformations, the proposed technique exploits the independent gate resistance value under DC bias conditions to first extract the extrinsic elements values and then the intrinsic ones...
The paper deals with the development of a PSpice based modeling platform for the evaluation of 4.5 kV and 2.0 kA power IGBT modules to be used in HVDC and FACTS applications. Using PSpice, a set of device parameters (both for IGBTs and diodes) have first been extracted and verified by static and dynamic comparison of experimental data from 4.5 kV and 2.0 kA Si based power modules. Implemented device...
A quantum model is used for the simulation of the double-gate (DG) InA1As/InGaAs HEMT for nanometer gate dimension with two separate gate controls. Classical approach fails from the nanoscale device modeling viewpoint. The Quantum Moments model includes the quantization effects and accordingly model the various vital characteristics of the device. The effect of quantization can be observed majorly...
During recent decades increasing interest has been shown in the development of bioelectronic sensors based on ion sensitive field effect transistors (ISFETs). Many ISFET-based pH sensors have been commercialized and attempts have also been made to commercialize ISFET based bioelectronic sensors for applications in the fields of medical, environmental, food safety, military and biotechnology areas...
This paper presents some insights into the modeling of different Multi-Gate SOI MOSFET structures, and in particular Tri-Gate MOSFETs (TGFETs). For long-channel case an electrostatic model can be developed from the solution of the 2D Poisson's equation in the section perpendicular to the channel. allowing it to be incorporated in quasi-2D compact models. For short-channel devices a model can be derived...
The VDMOS physical modeling method is studied, and then a VDMOS physical model is proposed for IC CAD. In this model, for the region whose cross-section area of electron flow is variable, a differential equation for the vertical electric field, which considers the high electric field's strong influence on the electron mobility, is established. Moreover, when the nonuniform electron concentration distribution...
The paper presents a mathematical model and its Matlab/Simulink realization for ball mill coal-pulverizing system (BMCPS). Based on the analysis of mass and energy balance, the physical models for all control-related sub-processes of BMCPS are developed respectively. Then the integrated dynamic mathematic model is constructed with Matlab/Simulink. Validation using the archived data from a power plant...
This paper presents modeling ballistic double gate MOSFETs by a neural network approach. A complete neural network structure is proposed to model the double gate characteristics. To confirm the accuracy of the proposed network, the drain current characteristics are compared to the nanoMOS device simulator data. The comparison shows excellent agreements with percentage errors lower than 1% over a range...
Quantum mechanical analytical modeling for calculating the drain current of FinFET devices has been proposed in this paper. The work is presented for a FinFET structure with channel length of 30 nm, Fin height of 30 nm and Fin thickness of 20 nm. The variation of drain current with applied drain voltage and gate voltage for varying channel lengths and Fin thicknesses has also been evaluated. Our analytical...
An improved nonlinear current-voltage (I-V) characteristics model for nanometer range GaAs MESFETs has been developed. In this regard, Ahmed et al. model for submicron GaAs MESFETs has been modified. In this modification, the effects of both drain-to-source voltage, VDS, and gate-to-source voltage, VGS, on the output conductance, gd, have been incorporated. Moreover, the effect of VGS on the onset...
We have theoretically analyzed the mechanism of PBTI degradation of high-k gate dielectrics. We proposed a PBTI degradation model based on a comprehensive physical theory using the general notation of gate leakage current and adequate trap distribution. Furthermore, by taking account not only pre-existing but also stress-induced defects, our model could explain the experimental data with high accuracy...
This paper presents an accurate and fully analytical model of delay in subthreshold inverters. The model characterizes the direct connection between the input slew and output delay. It is also capable of predicting the signal slew at the inverter output. Delay and slew prediction models are used to compute delay and understand slew propagation in an inverter chain. These models can also provide insight...
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is...
Modeling and simulation is important for the traffic analysis and performance evaluation in communication networks. LEO (low earth orbit) satellite system is so complex and dynamic that it is very difficult to find a mathematical model to describe it. In this paper, a novel modeling framework has been developed for LEO satellite networks by layered approach in a top-down manner. The framework is very...
RF non-quasi-static effect and interconnection delay effect are not considered in a conventional BSIM3v3 RF model. For modeling these effects, an improved RF SPICE model for 0.13 mum MOSFET is developed by including the scalable inductances and using the gate resistance scaling equation. This improved model is validated by finding better agreements with measured S-parameters up to 40 GHz at various...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.