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ReRAM (Resistive Random Access Memory) is an emerging non-volatile memory technology that exhibits high cell density and low standby power. ReRAM crossbars, while having the smallest 4F2 cell size, suffer from large sneak leakage, which not only wastes dynamic energy but also degrades system performance significantly. In this paper, we propose V-ReRAM, a novel ReRAM crossbar design based on 1TnR cell...
Emerging Resistive Memory (ReRAM) is a promising candidate as the replacement for DRAM because of its low power consumption, high density and high endurance. Due to the unique crossbar structure, ReRAM can be constructed with a very high density. However, ReRAM's crossbar structure causes an IR drop problem which results in non-uniform access latency in ReRAM banks and reduces its reliability. Besides,...
Many search engines or filters for the internet-of-things and big-data employ ternary content-addressable-memory (TCAM) to suppress power consumption in the transmission of data between end-devices and servers. Nonvolatile TCAMs (nvTCAM) are designed to achieve zero standby power with smaller area overhead and faster power off/on operations than those found in conventional TCAM+NVM 2-macro schemes...
Normally-off computing (NoC) is one of promising techniques that benefits microsystems with long sleep time. Because NoC can turn off power to achieve zero power consumption and can activate microsystems instantly. This study proposes a novel resistive random access memory (ReRAM)-based nonvolatile flip-flop (NVFF), fabricated using 90-nm CMOS technology and the ReRAM process of the Industrial Technology...
We report the impact of titanium (Ti) and TiOx interfacial layers on switching characteristics of MgO based Resistive Random Access Memory (ReRAM) devices. The devices with Ti/MgO and Ti/TiOx/MgO bi-layer structures demonstrated bipolar resistive switching characteristics with self-compliance behavior and low set/reset voltages. Much lower self-compliance current was observed for Ti/TiOx/MgO devices...
In recent years, the design of cross-point array based on resistive random access memory (ReRAM) has been widely investigated because it offers extremely high storage density and low power consumption. However, the sneak-path leakage in such a resistive network is inevitable and grows fast as the array size increases, which severely constrains the scalability of cross-point array. This work proposes...
Resistive memory technologies, in particular redox random access memory (ReRAM), are poised as one of the most prominent emerging memory categories to replace NAND flash and fill the important need for a Storage Class Memory (SCM). This is due to low switching energy, low current switching, high speed, outstanding endurance, scalability below 10 nm, and excellent back-end-of-line CMOS compatibility...
Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.
Recent announcement of 16Gbits Resistive memory from Sony shows the trend to quickly adopt resistive memories as an alternative to DRAM. However, using ReRAM for embedded computing is still a futuristic goal. This paper approaches two applications based on ReRAM-devices for gaining area, performance or power consumption. The first application is FPGA, one of the first architecture that can benefit...
As emerging non-volatile memories, based on resistive switching mechanisms, are attractive candidates to overcome future power issues, this paper proposes to analyze Single Event Effects in circuitry surrounding OxRRAMs. The impact of a particle crossing the circuit is presented. A threshold effect is pointed out even if the probability of SEE occurrence is shown to be low in common technologies.
In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a...
Electrical properties and microstructures of ZrTiO4 (ZrO2-TiO2) thin films prepared by the sol-gel method on ITO substrates at different annealing temperatures have been investigated. All films exhibited ZrTiO4 (111) and (101) orientations perpendicular to the substrate surface and the grain size increased with increasing annealing temperature. A low leakage current density of 1.47 ?? 10-6 A/cm2 was...
We have developed a novel method and model to describe the switching and degradation phenomena of uni-polar type ReRAM using conventional electric field dependent dielectric breakdown model. By this method, we can clearly describe the relationship between ??forming??, ??set??, ??reset??, and degradation process of TiO2 based ReRAM. In this paper, we will demonstrate our method and discuss the switching...
Emerging concepts of non-volatile memories are more and more investigated to replace conventional charge storage-based devices like EEPROM or Flash. One of these promising memory concepts is called Resistive Switching Memory (ReRAM). Such memory is based on a switching mechanism controlled in current and/or voltage, between two distinct resistive states depending upon the material nature integrated...
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