The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper an analytic subthreshold potential model for undoped cylindrical gate-all-around (GAA) MOSFET with asymmetric gate underlap is developed. This model is derived by solving the Poisson's equation with the parabolic potential approximation, channel length transformation and conformal mapping. The analytic body center potential solution is presented. Compared with TCAD simulations, the proposed...
The metal-oxide-semiconductor field-effect transistor (MOSFET) with a surrounding-gate (SG) is investigated. Poisson's Equation (PE) is solved analytically. The analytic expressions for electrical potential and threshold voltage (Vth) are obtained. The results are verified with Sentaurus simulations, good agreement is observed. The Vth model can be used for the integrated circuit designers.
The compact SOI-MOSFET model HiSIM-SOI based on the complete surface-potential description is presented. The model considers all possible charges induced in the device for the formulation of the Poisson equation, which is solved iteratively. Thus HiSIM-SOI is valid for any structural variations from thick to extremely thin SOI or BOX layers. The dynamic depletion between the fully and partially depleted...
A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing the channel length, by reducing either the silicon...
A new technique to calculate the channel electric field in Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFET) in subthreshold region is presented. 2D Poisson's equation is solved in an analytical closed-form with the conformal mapping technique. A comparison with data simulated by 2D TCAD Sentaurus simulator for channel lengths down to 22 nm was made and is in a good agreement to this simulation...
ULTRA-SOI is a new generation of the channel-potential-based non-charge-sheet model for the dynamic depletion (DD) Silicon-On-Insulator (SOI) MOSFET, developed by TSRC group in EECS department of Peking University with many year efforts. The model is formulated with a fully physical derivation from the Poisson's equation to solve the potential along the vertical direction of the silicon film. The...
This paper presents a new and more accurate potential based model for bulk MOSFET compared to the traditional charge-sheet surface potential model. The channel potential of the bulk MOSFET is obtained by solving Poisson equation and an accurate current expression is obtained base on it. Taking Pao-Sah model as a standard, the relative errors of the charge-sheet model may be as large as 4% in the saturation...
The modeling of the surface potential and diffusion current of SG MOSFETs with doped channel in the subthreshold region was preformed in this study. The compact models were verified in terms of channel length, fin body width, and body doping concentration at a given VGS and VDS by comparing with the results of the 3-D device simulation, and shown a good agreement with 3-D simulation.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.