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Robustness and reliability of an embedded RF-MEMS switch are analyzed. Changes of key switch parameters, such as COFF, CON, and pull-in voltage, with the ambient temperature are investigated in the range of -30°C to 150°C. The biggest temperature effect, a decrease by a factor of 2 between -30°C and 150°C, is observed for COFF, while CON weakly increases...
A robust design of RF MEMS capacitive shunt switches was implemented with a movable gold membrane, separate and non-contacting actuation pads, and electrostatic actuation. The same design was fabricated on silicon and quartz substrates with different combinations of dielectric constant, resistivity, thermal conductivity, and thermal expansion coefficient. It was found that most switches could operate...
An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25 ??m BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin film membrane into account. The pull-in voltage and the capacitance values obtained with the mechanical model agree very well with the measured values...
Microelectromechanical Systems (MEMS) for radio frequency (RF) applications or RF MEMS provides an opportunity to revolutionize the wireless communication. This paper describes the Performance of low loss Fixed-Fixed RF MEMS capacitive switch at higher frequencies. Many researchers focus on RF MEMS capacitive switch, which presents good performance at microwave frequencies. Modelling of RF MEMS devices...
The paper describes integrated CMOS-MEMS technology and its applications. We discuss the features of integrated complementary metal-oxide-semi-conductor-microelectromechanical systems (CMOS- MEMS). The prospect of this integration is also presented. A MEMS fingerprint sensor and a low-voltage radio frequency (RF) CMOS-MEMS switch are the case studies discussed. In conclusion, it is confirmed that...
We describe a 0.18/0.5 um RF CMOS thick Silicon-On-Insulator (SOI) technology built on high resistivity (1 kOhm-cm) substrates. A high performance/high power RF MEMS contact switch can also be integrated in the technology through above-IC post-processing. This RFCMOS/MEMS integrated technology provides a platform for cost-effective monolithic integration of several RF RX/TX functions for next generation...
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