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A Si ultra-thin body (UTB) junctionless field-effect transistor (UTB-JLFET) with LG = 1 nm and LG = 3 nm have been demonstrated by solving the coupled driftdiffusion (DD) and density-gradient (DG) model. The simulation results show that the Si can be used in ultra-short channel device as long as UTB is employed. As UTB is employed, ultra-short channel device does not need to follow an empirical rule...
We have previously proposed a new digital CMOS circuit which combined subthreshold circuit and adiabatic logic circuit with ultra-low power consumption. Our proposed circuit which is driven by two AC power supply with different frequency and amplitude, and is adapted to be provided a margin of switching timing of input signal. In this paper, we show a skew tolerance analysis of subthreshold adiabatic...
Analog-to-Digital (A/D) conversion is faced with strong requirements in terms of resolution and frequency. Time-Interleaved Analog-to-Digital Converters (TIADC) are popular because they offer a higher sampling frequency. But, their architecture introduces errors that affect the resolution of conversion. This paper presents a built-in method of calibration dedicated to TIADC. Mixed-simulations are...
NBTI imposes a challenge for the design of circuits in DSM technologies. NBTI causes increase of Vt of the PMOS transistors, thus leading to timing degradation of CMOS circuits over time. This manuscript presents a NBTI-aware transistor sizing technique for high-performance CMOS gates, which improves the cell reliability with minimum area penalty. The delay of an inverter designed on a 32 nm technology...
This paper studies a new hold time failure mode found in deep sub-micron low power CMOS production scan testing. The root causes of failure are discovered and duplicated in simulations. Vccmin of scan chain integrity is defined and studied for the first time. Solutions for enhancing scan chain integrity are proposed.
The first evaluation of a soft-edge flip-flop is presented as an alternative to useful-skew and latch-based designs for variation compensation in a 16-bit 8-tap FIR filter in 0.13 mum CMOS. An 11.2% performance improvement was achieved over a standard hard edge data flip-flop (9.2% when post-silicon useful-skew is applied).
This paper presents principles and results of dynamic testing of an SRAM-based FPGA using time- resolved fault injection with a pulsed laser. The synchronization setup and experimental procedure are detailed. Fault injection results obtained with a DES crypto-core application implemented on a Xilinx Virtex II are discussed.
Simultaneous switching noise (SSN) is an important issue for the design and test and actual ICs. In particular, SSN that originates from the internal logic circuitry becomes a serious problem as the speed and density of the internal circuit increase. In this paper, an on-chip monitor is proposed to detect potential logic errors in digital circuits due to the presence of SSN. This monitor checks the...
This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
The soft-error vulnerability of flip-flops has become an important factor in IC reliability in sub-100-nm CMOS technologies. In the present work the soft-error rate (SER) of a 65-nm flip-flop has been investigated with the use of alpha-accelerated testing. Simulations have been applied to study the flip-flop SER sensitivity in detail. Furthermore, an easy-to-use approach is presented to make an accurate...
With the event of nanoscale technologies, new physical phenomena and technological limitations are increasing the process variability and its impact on circuit yield and performances. Like combinatory cells, the sequential cells also suffer of variations, impacting their timing characteristics. Regarding the timing behaviors, setup and hold time violation probabilities are increasing. This article...
The minimum operating voltage (Vmin) of nano-scale LSIs is investigated, focusing on logic gates, SRAM cells, and DRAM sense amplifiers in LSIs. The Vmin that is governed by SRAM cells rapidly increases as devices are miniaturized due to the ever-larger variation of the threshold voltage (VT) of MOSFETs. The Vmin, however, is reduced to the sub-one-volt region by using repair techniques and new MOSFETs...
This paper studies the impact of intra-die random variability on low-power digital circuit designs, specifically, circuit timing failures due to intra-die variability. We identify a new low-Vdd statistical failure mode that is strongly supply-voltage dependent and also introduce a simple yet novel method for quantifying the effects of process variability on digital timing - a delay overlapping stage...
This paper describes a design flow for the circuit-level optimization of a technology. The concurrent exploration of device characteristics and library design choices leads to a more application-optimal technology. We illustrate the design flow by: 1) analyzing the impact of buffer cell design, and 2) by optimizing a 130 nm technology for low operational power.
We present a generic method for analyzing the effect of process variability in nanoscale circuits. The proposed framework uses kernel and a generic tail probability estimator to eliminate the need for a-priori density choice for the nature of circuit variation. This allows capturing the true nature of the circuit variation from a few random samples of its observed responses. The data-driven, non-parametric,...
As mainstream processing technology advances into 65 nm and beyond, many factors that were previously considered secondary or insignificant, can now have an impact on chip timing. One of these factor is inversed temperature dependence (ITD). As supply voltage continues scaling into sub-IV territory, delay-temperature relationship can be reversed on some cells, meaning that device switching time may...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
This paper describes a low-power clocked CMOS adiabatic logic (CAL) with only one ac power supply that serves as the power clock. Each CAL stage performs true and complementary logic functions, and presents a constant capacitive load to the power clock generator. A simple and efficient resonant power clock is integrated with the logic to generate the required ac supply waveform and facilitate adiabatic...
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