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In this work we present a characterization of PECVD (plasma-enhanced chemical vapour deposition) amorphous silicon carbide films for MEMS/BioMEMS applications. For this applications a high deposition rate and a controllable value of the residual stress is required. The influence of the main parameters is analyzed. Due to annealing effect, the temperature can decrease the compressive value of the stress...
Si nanocrystals in SiCX films by both furnace and rapid thermal annealing (RTA) techniques have been studied by Raman characterization. Silicon rich carbide films with different stoichiometric composition were prepared by co-sputtering of Si and SiC targets. Two different annealing processes have been applied on all SiCX amorphous samples: furnace annealing at 1100°C/1hr and RTA at 1100oC/30 sec....
This work reports the development of very low residual stress and low strain gradient polycrystalline SiC (poly-SiC) thin films deposited by low pressure chemical vapor deposition (LPCVD). Using dichlorosilane (DCS, SiH2Cl2) and acetylene (C2H2) as precursors, it was found that the flow rate of DCS can be used to adjust the residual stress from tensile to compressive in as-deposited films. The resulting...
Polycrystalline aluminum nitride thin films were deposited on polycrystalline 3C-SiC buffer layers by pulsed reactive magnetron sputtering system. Structural properties of AlN/3C-SiC thin films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR. The columnar structure of AlN thin films was observed by FE-SEM. Results of XRD and FT-IR shows that AlN films on SiC layers...
Low residual stress and high repeatability of plasma enhanced chemical vapor deposited SiNx thin films were obtained by optimizing dual radio frequency power source and eliminating influence of dielectric films formerly deposited on chamber wall.
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