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Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce,sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules,...
A 1700 V 60 A SiC MOSFET has been fabricated and the high-speed switching characteristics are evaluated. The SiC MOSFET is designed to have low internal gate resistance (RGin) in order to realize the high-speed switching without parasitic turn-on of the opposite SiC MOSFET in a half bridge. By using the developed SiC MOSFETs, a 1700 V 360A power module with very low parasitic inductance structure...
This paper proposes a thorough experimental characterization of the performance of commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is to assess and understand the degradation process and the failure mechanisms that limit device reliability to identify optimal routes for subsequent technology development. This paper complements electro-thermal functional tests with...
We developed the All-SiC power module for photovoltaic Power Conditioner System (PCS). The All-SiC module has SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and SiC-SBD (Schottky Barrier Diode) which are sandwiched between SiN (Silicon Nitride) substrate and power circuit board. Thick copper block which is attached SiN substrate enhances low thermal resistance and Cu pin which is connected...
In this paper, we report on 1.2kV SiC MOSFETs rated to Tj, max=200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at Tj=25°C and 47mOhm/103mOhms at Tj=150°C are shown for 0.1cm2 and 0.2cm2 die. 1000 hour High-Temperature...
This study addresses the transient and steady-state performance of a >13 kV SiC p-ETO. The developed SiC p-ETO is based on a 1 cm2, 15 kV SiC p-GTO with an extremely low differential resistance. Static performance of the device, including the on-state voltage drop at different temperatures and different currents is carried out in this paper. Furthermore, transient performance of the device, including...
Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation,...
4H-SiC trench MOSFETs with novel V-groove structures have been investigated. We have fabricated trench MOSFETs with the inclined 4H-SiC{0-33-8} face [1, 2] as trench sidewalls for the channel region, resulting in a low specific on-resistance owing to the superior MOS interface properties. In addition, by using buried p+ regions inside the drift layer, a high voltage avalanche breakdown without oxide...
The SiC JFET/Si MOSFET cascode is an attractive alternative to conventional Si MOSFETs or IGBTs due to its low on-resistance and good switching performance. However, dv/dt control without increased switching loss is difficult when using a conventional gate resistor or capacitor for the MOSFET. In this paper, a dv/dt and switching loss control method that ensures a good switching performance for the...
The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300V) and large current (40A) were fabricated. In addition, we have succeeded in fabricating the larger current (300A) 4H-SiC trench MOSFET with low-on resistance (2.6mΩcm2). And, regarding high-temperature operation, SiC IPMs can...
The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300 V) and large current (40 A) were fabricated. In addition, we have succeeded in fabricating the larger current (300 A) 4H-SiC trench MOSFET with low-on resistance (2.6 mΩ cm2). And, regarding high-temperature operation, SiC IPMs...
IBM graphene FETs (GFET) yield the highest cut-off frequency (fT) values reported: >;200 GHz on epitaxially grown SiC wafer and >;150 GHz1 on CVD-grown-transferred onto Si wafer which are well above Si MOSFET fT-Lg trend in ITRS2. A novel reconfigurable graphene p-n junction based logic device is also introduced. Its switching is accomplished by using co-planar split gates that modulate the...
Several approaches of solid phase epitaxy (SPE) formed embedded SiC (eSiC) scheme have been investigated on 28 nm node technology. The single SPE thermal process by LSA only with post S/D scheme is reported to accommodate high carbon concentration as well as low sheet resistance in this work. Cluster carbon with tilted angle implantation is designed to further simplify process and increase channel...
The application of existing reliability test standards, based on Si technology, to SiC power MOSFET reliability qualification can in some cases result in ambiguous test results. Depending on the exact measurement procedure, a given device stress tested under identical conditions may either pass or fail. The large variations observed in ID-VGS characteristics, and accompanying shift in threshold voltage...
In this study, we investigate the impact of thermal annealing on the electrical characteristics of epitaxial graphene field effect transistors. Top gated devices were fabricated from graphene obtained on silicon carbide (SiC) substrate. Thanks to an annealing at 300°C, the performance of the devices was enhanced by a factor of 90. The maximal transconductance reached really high values such as 5900μS/μm...
This paper presents an analysis of single discrete silicon carbide (SiC) JFET and BJT devices and their parallel operation. The static and dynamic characteristics of the devices were obtained over a wide range of temperature to study the scaling of device parameters. The static parameters like on-resistance, threshold voltage, current gains, transconductance, and leakage currents were extracted to...
RECENT progress in wide bandgap power (WBG) switches shows great potential. Silicon carbide (SiC) is a promising material for power devices with breakdown voltages of several hundred volts up to 10 kV. SiC Schottky power diodes have achieved widespread commercial acceptance. Recently, much progress has been made on active SiC switches, including JFETs, thyristors, BJTs, IGBTs, and MOSFETs. Many a...
Bidirectional solid-state circuit breakers (BDSSCBs) can replace mechanical fault protection devices in systems having bidirectional current flow through a single bus, for increased transition speed, functionality, and reliability. Silicon carbide, 1200-V, 0.1-cm2 JFETs were designed and fabricated for the BDSSCB application. A novel BDSSCB gate driver was developed for both self-triggered temperature-compensated...
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies...
Taking full advantage of SiC devices, a team from Oak Ridge National Laboratory, the University of Tennessee and Virginia Polytechnic Institute and State University have designed, developed, and tested a phase-leg power module based on a high temperature wirebond package. Details of the layout, gate drive, and cooling system designs are described. Continuous power tests confirmed that our design process...
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