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The rapid development of three dimensional packaging makes it necessary to develop smaller and more reliable microbumps. In the electrodeposition process of bump cylinder, the filling quality is largely determined by the combination of additives. In this work, the effect and competitive adsorption between suppressor polyethylene glycol (PEG) and accelerator Bis-(3-sodiumsulfopropyl disulfide) (SPS)...
This paper illustrates the technical advantages and extendibility of low Cu electrolyte for future generation damascene filling. Such improvement stems from many benefits low Cu concentration can provide: (1) stronger polarization, (2) stronger and more uniform adsorption of suppressors, (3) higher solubility of suppressor molecules for better wetting and defect performance, and (4) higher nucleation...
The kinetics which explained the copper Superfilling by electrodeposition was investigated since the copper electrodeposition became the standard technique for TSV. In order to interpret the bottom-up Superfilling process conveniently and exactly, a numerical model focused on the mass which can make the copper deposition in the via is built. This model only considered the effect of accelerator and...
The kinetics which explained the Copper Super-filling by electrodepostition was investigated since the copper deposition became the standard technique for TSV. A simple numerical model is built to explain the copper deposition process. Consider with the effect of the accelerator, a linear equation is built to explain the relationship between the exchange current density and the coverage of accelerator...
In TSV copper electroplating, the goal is to achieve superfilling deposition. In order to reach the bottom-up in TSV copper electroplating, some additives (accelerator suppressor and leveler) are added into the electroplating bath. To know the relationship between additives in the plating solution is very important. In the present work, by means of linear sweep voltammetry (LSV) and cyclic voltammogram...
In recent years, through wafer electrical connections have become important roles, which will be used in developing high-speed, compact 3D microelectronic devices in next generation. Although the electroplating copper is a well-established process, completely void-free electroplating in through silicon holes (TSH) with a high aspect ratio remains a big challenge. Naturally, local current distribution...
Superfill (bottom-up) phenomena relevant for Damascene processing typically rely on the time-dependent interplay of various organic and inorganic additives with both the metallic copper surface and with cuprous ions as intermediates of the copper electro-reduction in the near-surface regime. In-situ STM, in-situ SXRD (Surface X-Ray Diffraction) measurements combined with DFT calculations provide new...
One reliability concern, when soldering to a Cu surface finish, is the sporadic mechanical degradation of solder joints due to the formation and growth of voids within the interfacial Cu3Sn intermetallic compound (IMC) layer and at its interface with the Cu pad structure. Excess organic impurity incorporation during Cu electroplating has been shown to cause this problem. The level of impurity incorporation...
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