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Graphene transistors using large area CVD monolayer graphene are constructed and examined. Back-gated devices with exposed graphene channels are characterized to shed light on some of the apparent doping and transport effects that could impact the device performance. Electrical measurements under vacuum and soft-anneal conditions are used to modulate the effective doping density and carrier mobility...
We predict the possibility of shot noise enhancement in defect-free Carbon Nanotube Field Effect Transistors, through a numerical investigation based on Monte Carlo simulations of randomly injected electrons from the reservoirs and the self-consistent solution of the Poisson and Schrodinger equations within the non-equilibrium Green's functions formalism. Such enhancement can be explained by a positive...
An effective approach of quantum transport of Dirac carriers in mono- and bi-layer graphene structures and devices is presented. Initially based on the Green's function formalism to treat the Dirac Hamiltonian of massless particles in two-dimensional mono-layer graphene, the model has been extended to to small bandgap materials and to bi-layer graphene with massive carriers. It is applied to investigate...
We discuss an intriguing set of transport and noise properties of graphene-based transistors that can be investigated in a direct way with atomistic modeling - Non-Equilibrium Green's Functions with a Tight-Binding Hamiltonian - and are not directly accessible with models based on a higher level of physical abstraction. We present an investigation of the achievable electron mobility in channels based...
In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz...
Carbon nanotubes (CNTs) have been studied in recent years due to their exceptional electronic, opto-electronic, and mechanical properties. To explore the physics of carbon nanotube field-effect transistors (CNT-FETs) self-consistent quantum mechanical simulations have been performed. Both the electron-photon and electron-phonon interactions in CNT-FETs have been analyzed numerically, employing the...
Carbon nanotubes have been considered in recent years for future opto-electronic applications because of their direct band-gap and the tunability of the band-gap with the CNT diameter. The performance of infra-red photo-detectors based on carbon nanotube field-effect transistors is analyzed, using the non-equilibrium Greenpsilas function formalism. The relatively low ratio of the photo-current to...
We present a physical compact model of a dual gate carbon nanotube field effect transistor (DG CNTFET). To obtain an accurate and predictive model, the expression of the drain current is based on the description of the local channel potentials as well as the injected charge. The comparison between the simulation results and experiments highlights the influence of the parasitic Schottky barrier at...
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